@article{journals/jssc/ChenCWLPLCLLCWC15,
  added-at = {2015-01-08T00:00:00.000+0100},
  author = {Chen, Yen-Huei and Chan, Wei-Min and Wu, Wei-Cheng and Liao, Hung-Jen and Pan, Kuo-Hua and Liaw, Jhon-Jhy and Chung, Tang-Hsuan and Li, Quincy and Lin, Chih-Yung and Chiang, Mu-Chi and Wu, Shien-Yang and Chang, Jonathan},
  biburl = {http://www.bibsonomy.org/bibtex/23ccda6925b333fb5857d281f9c154aa6/dblp},
  ee = {http://dx.doi.org/10.1109/JSSC.2014.2349977},
  interhash = {8863cf952918c80499e55c4058e08440},
  intrahash = {3ccda6925b333fb5857d281f9c154aa6},
  journal = {J. Solid-State Circuits},
  keywords = {dblp},
  number = 1,
  pages = {170-177},
  timestamp = {2015-06-18T06:57:03.000+0200},
  title = {A 16 nm 128 Mb SRAM in High- $\kappa$ Metal-Gate FinFET Technology With Write-Assist Circuitry for Low-VMIN Applications.},
  url = {http://dblp.uni-trier.de/db/journals/jssc/jssc50.html#ChenCWLPLCLLCWC15},
  volume = 50,
  year = 2015
}

{"_id":"tc6WGYv6phJZKnrQG","bibbaseid":"chen-chan-wu-liao-pan-liaw-chung-li-etal-a16nm128mbsraminhighppametalgatefinfettechnologywithwriteassistcircuitryforlowvminapplications-2015","downloads":0,"creationDate":"2016-01-01T22:50:44.052Z","title":"A 16 nm 128 Mb SRAM in High- $ąppa$ Metal-Gate FinFET Technology With Write-Assist Circuitry for Low-VMIN Applications.","author_short":["Chen, Y.","Chan, W.","Wu, W.","Liao, H.","Pan, K.","Liaw, J.","Chung, T.","Li, Q.","Lin, C.","Chiang, M.","Wu, S.","Chang, J."],"year":2015,"bibtype":"article","biburl":"http://www.bibsonomy.org/bib/author/Emir Muñoz?items=1000","bibdata":{"bibtype":"article","type":"article","added-at":"2015-01-08T00:00:00.000+0100","author":[{"propositions":[],"lastnames":["Chen"],"firstnames":["Yen-Huei"],"suffixes":[]},{"propositions":[],"lastnames":["Chan"],"firstnames":["Wei-Min"],"suffixes":[]},{"propositions":[],"lastnames":["Wu"],"firstnames":["Wei-Cheng"],"suffixes":[]},{"propositions":[],"lastnames":["Liao"],"firstnames":["Hung-Jen"],"suffixes":[]},{"propositions":[],"lastnames":["Pan"],"firstnames":["Kuo-Hua"],"suffixes":[]},{"propositions":[],"lastnames":["Liaw"],"firstnames":["Jhon-Jhy"],"suffixes":[]},{"propositions":[],"lastnames":["Chung"],"firstnames":["Tang-Hsuan"],"suffixes":[]},{"propositions":[],"lastnames":["Li"],"firstnames":["Quincy"],"suffixes":[]},{"propositions":[],"lastnames":["Lin"],"firstnames":["Chih-Yung"],"suffixes":[]},{"propositions":[],"lastnames":["Chiang"],"firstnames":["Mu-Chi"],"suffixes":[]},{"propositions":[],"lastnames":["Wu"],"firstnames":["Shien-Yang"],"suffixes":[]},{"propositions":[],"lastnames":["Chang"],"firstnames":["Jonathan"],"suffixes":[]}],"biburl":"http://www.bibsonomy.org/bibtex/23ccda6925b333fb5857d281f9c154aa6/dblp","ee":"http://dx.doi.org/10.1109/JSSC.2014.2349977","interhash":"8863cf952918c80499e55c4058e08440","intrahash":"3ccda6925b333fb5857d281f9c154aa6","journal":"J. Solid-State Circuits","keywords":"dblp","number":"1","pages":"170-177","timestamp":"2015-06-18T06:57:03.000+0200","title":"A 16 nm 128 Mb SRAM in High- $ąppa$ Metal-Gate FinFET Technology With Write-Assist Circuitry for Low-VMIN Applications.","url":"http://dblp.uni-trier.de/db/journals/jssc/jssc50.html#ChenCWLPLCLLCWC15","volume":"50","year":"2015","bibtex":"@article{journals/jssc/ChenCWLPLCLLCWC15,\n added-at = {2015-01-08T00:00:00.000+0100},\n author = {Chen, Yen-Huei and Chan, Wei-Min and Wu, Wei-Cheng and Liao, Hung-Jen and Pan, Kuo-Hua and Liaw, Jhon-Jhy and Chung, Tang-Hsuan and Li, Quincy and Lin, Chih-Yung and Chiang, Mu-Chi and Wu, Shien-Yang and Chang, Jonathan},\n biburl = {http://www.bibsonomy.org/bibtex/23ccda6925b333fb5857d281f9c154aa6/dblp},\n ee = {http://dx.doi.org/10.1109/JSSC.2014.2349977},\n interhash = {8863cf952918c80499e55c4058e08440},\n intrahash = {3ccda6925b333fb5857d281f9c154aa6},\n journal = {J. Solid-State Circuits},\n keywords = {dblp},\n number = 1,\n pages = {170-177},\n timestamp = {2015-06-18T06:57:03.000+0200},\n title = {A 16 nm 128 Mb SRAM in High- $\\kappa$ Metal-Gate FinFET Technology With Write-Assist Circuitry for Low-VMIN Applications.},\n url = {http://dblp.uni-trier.de/db/journals/jssc/jssc50.html#ChenCWLPLCLLCWC15},\n volume = 50,\n year = 2015\n}\n\n","author_short":["Chen, Y.","Chan, W.","Wu, W.","Liao, H.","Pan, K.","Liaw, J.","Chung, T.","Li, Q.","Lin, C.","Chiang, M.","Wu, S.","Chang, J."],"key":"journals/jssc/ChenCWLPLCLLCWC15","id":"journals/jssc/ChenCWLPLCLLCWC15","bibbaseid":"chen-chan-wu-liao-pan-liaw-chung-li-etal-a16nm128mbsraminhighppametalgatefinfettechnologywithwriteassistcircuitryforlowvminapplications-2015","role":"author","urls":{"Link":"http://dx.doi.org/10.1109/JSSC.2014.2349977","Paper":"http://dblp.uni-trier.de/db/journals/jssc/jssc50.html#ChenCWLPLCLLCWC15"},"keyword":["dblp"],"downloads":0},"search_terms":["128","sram","high","ppa","metal","gate","finfet","technology","write","assist","circuitry","low","vmin","applications","chen","chan","wu","liao","pan","liaw","chung","li","lin","chiang","wu","chang"],"keywords":["dblp"],"authorIDs":[],"dataSources":["wqGwgwuNEkgHptPJs"]}