Open-Circuit Voltage Deficit, Radiative Sub-Bandgap States, and Prospects in Quantum Dot Solar Cells. Chuang, C. M., Maurano, A., Brandt, R. E., Hwang, G. W., Jean, J., Buonassisi, T., Bulović, V., & Bawendi, M. G. Nano Letters, 15(5):3286–3294, May, 2015.
Open-Circuit Voltage Deficit, Radiative Sub-Bandgap States, and Prospects in Quantum Dot Solar Cells [link]Paper  doi  abstract   bibtex   
Quantum dot photovoltaics (QDPV) offer the potential for low-cost solar cells. To develop strategies for continued improvement in QDPVs, a better understanding of the factors that limit their performance is essential. Here, we study carrier recombination processes that limit the power conversion efficiency of PbS QDPVs. We demonstrate the presence of radiative sub-bandgap states and sub-bandgap state filling in operating devices by using photoluminescence (PL) and electroluminescence (EL) spectroscopy. These subbandgap states are most likely the origin of the high opencircuit-voltage (VOC) deficit and relatively limited carrier collection that have thus far been observed in QDPVs. Combining these results with our perspectives on recent progress in QDPV, we conclude that eliminating sub-bandgap states in PbS QD films has the potential to show a greater gain than may be attainable by optimization of interfaces between QDs and other materials. We suggest possible future directions that could guide the design of high-performance QDPVs.
@article{chuang_open-circuit_2015,
	title = {Open-{Circuit} {Voltage} {Deficit}, {Radiative} {Sub}-{Bandgap} {States}, and {Prospects} in {Quantum} {Dot} {Solar} {Cells}},
	volume = {15},
	copyright = {All rights reserved},
	issn = {1530-6984, 1530-6992},
	url = {http://pubs.acs.org/doi/10.1021/acs.nanolett.5b00513},
	doi = {10.1021/acs.nanolett.5b00513},
	abstract = {Quantum dot photovoltaics (QDPV) offer the potential for low-cost solar cells. To develop strategies for continued improvement in QDPVs, a better understanding of the factors that limit their performance is essential. Here, we study carrier recombination processes that limit the power conversion efficiency of PbS QDPVs. We demonstrate the presence of radiative sub-bandgap states and sub-bandgap state filling in operating devices by using photoluminescence (PL) and electroluminescence (EL) spectroscopy. These subbandgap states are most likely the origin of the high opencircuit-voltage (VOC) deficit and relatively limited carrier collection that have thus far been observed in QDPVs. Combining these results with our perspectives on recent progress in QDPV, we conclude that eliminating sub-bandgap states in PbS QD films has the potential to show a greater gain than may be attainable by optimization of interfaces between QDs and other materials. We suggest possible future directions that could guide the design of high-performance QDPVs.},
	language = {en},
	number = {5},
	urldate = {2019-07-12},
	journal = {Nano Letters},
	author = {Chuang, Chia-Hao Marcus and Maurano, Andrea and Brandt, Riley E. and Hwang, Gyu Weon and Jean, Joel and Buonassisi, Tonio and Bulović, Vladimir and Bawendi, Moungi G.},
	month = may,
	year = {2015},
	pages = {3286--3294},
}

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