@article{craciun_light_1996,
	title = {Light emission from germanium nanoparticles formed by ultraviolet assisted oxidation of silicon‐germanium},
	volume = {69},
	issn = {0003-6951, 1077-3118},
	url = {http://scitation.aip.org/content/aip/journal/apl/69/11/10.1063/1.117986},
	doi = {10.1063/1.117986},
	abstract = {NanocrystallineGe particles embedded in a SiO2 layer, directly formed by an excision process from a SiGe strained layer during low temperature ultraviolet‐assisted oxidation are shown to exhibit visible photoluminescence. The emission maxima of the photoluminescencespectra are situated at around 2.18 eV, a value that corresponds, according to recent data to an average particle size of 5 nm, in excellent agreement with our previous Raman and transmission electron microscopy measurements of particle size. It is proposed that stress effects associated with the oxidation of small spherical particles allow the formed nanocrystallineGe to survive during prolonged ultraviolet oxidation of the SiGe layer.},
	number = {11},
	urldate = {2014-03-27},
	journal = {Applied Physics Letters},
	author = {Craciun, Valentin and Boulmer‐Leborgne, Chantal and Nicholls, Edward J. and Boyd, Ian W.},
	month = sep,
	year = {1996},
	keywords = {Germanium, Nanocrystalline materials, Photoluminescence, elemental semiconductors, oxidation},
	pages = {1506--1508},
}

{"_id":"5gWwnFc2pLajpxGFA","bibbaseid":"craciun-boulmerleborgne-nicholls-boyd-lightemissionfromgermaniumnanoparticlesformedbyultravioletassistedoxidationofsilicongermanium-1996","author_short":["Craciun, V.","Boulmer‐Leborgne, C.","Nicholls, E. J.","Boyd, I. W."],"bibdata":{"bibtype":"article","type":"article","title":"Light emission from germanium nanoparticles formed by ultraviolet assisted oxidation of silicon‐germanium","volume":"69","issn":"0003-6951, 1077-3118","url":"http://scitation.aip.org/content/aip/journal/apl/69/11/10.1063/1.117986","doi":"10.1063/1.117986","abstract":"NanocrystallineGe particles embedded in a SiO2 layer, directly formed by an excision process from a SiGe strained layer during low temperature ultraviolet‐assisted oxidation are shown to exhibit visible photoluminescence. The emission maxima of the photoluminescencespectra are situated at around 2.18 eV, a value that corresponds, according to recent data to an average particle size of 5 nm, in excellent agreement with our previous Raman and transmission electron microscopy measurements of particle size. It is proposed that stress effects associated with the oxidation of small spherical particles allow the formed nanocrystallineGe to survive during prolonged ultraviolet oxidation of the SiGe layer.","number":"11","urldate":"2014-03-27","journal":"Applied Physics Letters","author":[{"propositions":[],"lastnames":["Craciun"],"firstnames":["Valentin"],"suffixes":[]},{"propositions":[],"lastnames":["Boulmer‐Leborgne"],"firstnames":["Chantal"],"suffixes":[]},{"propositions":[],"lastnames":["Nicholls"],"firstnames":["Edward","J."],"suffixes":[]},{"propositions":[],"lastnames":["Boyd"],"firstnames":["Ian","W."],"suffixes":[]}],"month":"September","year":"1996","keywords":"Germanium, Nanocrystalline materials, Photoluminescence, elemental semiconductors, oxidation","pages":"1506–1508","bibtex":"@article{craciun_light_1996,\n\ttitle = {Light emission from germanium nanoparticles formed by ultraviolet assisted oxidation of silicon‐germanium},\n\tvolume = {69},\n\tissn = {0003-6951, 1077-3118},\n\turl = {http://scitation.aip.org/content/aip/journal/apl/69/11/10.1063/1.117986},\n\tdoi = {10.1063/1.117986},\n\tabstract = {NanocrystallineGe particles embedded in a SiO2 layer, directly formed by an excision process from a SiGe strained layer during low temperature ultraviolet‐assisted oxidation are shown to exhibit visible photoluminescence. The emission maxima of the photoluminescencespectra are situated at around 2.18 eV, a value that corresponds, according to recent data to an average particle size of 5 nm, in excellent agreement with our previous Raman and transmission electron microscopy measurements of particle size. It is proposed that stress effects associated with the oxidation of small spherical particles allow the formed nanocrystallineGe to survive during prolonged ultraviolet oxidation of the SiGe layer.},\n\tnumber = {11},\n\turldate = {2014-03-27},\n\tjournal = {Applied Physics Letters},\n\tauthor = {Craciun, Valentin and Boulmer‐Leborgne, Chantal and Nicholls, Edward J. and Boyd, Ian W.},\n\tmonth = sep,\n\tyear = {1996},\n\tkeywords = {Germanium, Nanocrystalline materials, Photoluminescence, elemental semiconductors, oxidation},\n\tpages = {1506--1508},\n}\n\n","author_short":["Craciun, V.","Boulmer‐Leborgne, C.","Nicholls, E. J.","Boyd, I. W."],"key":"craciun_light_1996","id":"craciun_light_1996","bibbaseid":"craciun-boulmerleborgne-nicholls-boyd-lightemissionfromgermaniumnanoparticlesformedbyultravioletassistedoxidationofsilicongermanium-1996","role":"author","urls":{"Paper":"http://scitation.aip.org/content/aip/journal/apl/69/11/10.1063/1.117986"},"keyword":["Germanium","Nanocrystalline materials","Photoluminescence","elemental semiconductors","oxidation"],"metadata":{"authorlinks":{}},"html":""},"bibtype":"article","biburl":"https://bibbase.org/zotero/spintextures","dataSources":["rXHvWQJHcL8ctHS4s"],"keywords":["germanium","nanocrystalline materials","photoluminescence","elemental semiconductors","oxidation"],"search_terms":["light","emission","germanium","nanoparticles","formed","ultraviolet","assisted","oxidation","silicon","germanium","craciun","boulmer‐leborgne","nicholls","boyd"],"title":"Light emission from germanium nanoparticles formed by ultraviolet assisted oxidation of silicon‐germanium","year":1996}