In-Situ Characterization of Ohmic Contacts to N-Type SiC Under High Temperature and Current. DeAngelis, D. & Okojie, R. In The TMS 46th Electronic Materials Conference (EMC 2004), Notre Dame, Indiana, 2004.
In-Situ Characterization of Ohmic Contacts to N-Type SiC Under High Temperature and Current [link]Paper  bibtex   
@inproceedings{DeAngelis2004,
address = {Notre Dame, Indiana},
author = {DeAngelis, David and Okojie, Robert},
booktitle = {The TMS 46th Electronic Materials Conference (EMC 2004)},
file = {:home/dave/Documents/References/DeAngelis, Okojie - 2004 - In-Situ Characterization of Ohmic Contacts to N-Type SiC Under High Temperature and Current.pdf:pdf},
title = {In-Situ Characterization of Ohmic Contacts to N-Type SiC Under High Temperature and Current},
url = {https://www.tms.org/Meetings/Specialty/EMC04/EMC04-pdfs.html},
year = {2004}
}

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