Epitaxial ferromagnetic oxide thin films on silicon with atomically sharp interfaces. de Coux, P.; Bachelet, R.; Warot-Fonrose, B.; Skumryev, V.; Lupina, L.; Niu, G.; Schroeder, T.; Fontcuberta, J.; and Sanchez, F. Applied Physics Letters, 105(1):012401, July, 2014. WOS:000339664900049
doi  abstract   bibtex   
A bottleneck in the integration of functional oxides with silicon, either directly grown or using a buffer, is the usual formation of an amorphous interfacial layer. Here, we demonstrate that ferromagnetic CoFe2O4 films can be grown epitaxially on Si(111) using a Y2O3 buffer layer, and remarkably the Y2O3/Si(111) interface is stable and remains atomically sharp. CoFe2O4 films present high crystal quality and high saturation magnetization. (C) 2014 AIP Publishing LLC.
@article{de_coux_epitaxial_2014,
	title = {Epitaxial ferromagnetic oxide thin films on silicon with atomically sharp interfaces},
	volume = {105},
	doi = {10.1063/1.4887349},
	abstract = {A bottleneck in the integration of functional oxides with silicon, either directly grown or using a buffer, is the usual formation of an amorphous interfacial layer. Here, we demonstrate that ferromagnetic CoFe2O4 films can be grown epitaxially on Si(111) using a Y2O3 buffer layer, and remarkably the Y2O3/Si(111) interface is stable and remains atomically sharp. CoFe2O4 films present high crystal quality and high saturation magnetization. (C) 2014 AIP Publishing LLC.},
	number = {1},
	journal = {Applied Physics Letters},
	author = {de Coux, P. and Bachelet, R. and Warot-Fonrose, B. and Skumryev, V. and Lupina, L. and Niu, G. and Schroeder, T. and Fontcuberta, J. and Sanchez, F.},
	month = jul,
	year = {2014},
	note = {WOS:000339664900049},
	pages = {012401}
}
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