Quasi-digital front-ends for current measurement in integrated circuits with giant magnetoresistance technology. De Marcellis, A., Cubells-Beltran, M., Reig, C., Madrenas, J., Zadov, B., Paperno, E., Cardoso, S., & Freitas, P. P. IET CIRCUITS DEVICES & SYSTEMS, 8(4):291-300, JUL, 2014. doi abstract bibtex In this study, the authors report on two different electronic interfaces for low-power integrated circuits electric current monitoring through current-to-frequency (I-f) conversion schemes. This proposal displays the intrinsic advantages of the quasi-digital systems regarding direct interfacing and self-calibrating capabilities. In addition, as current-sensing devices, they have made use of the giant magnetoresistance (GMR) technology because of its high sensitivity and compatibility with standard complementary metal oxide semiconductor processes. Single elements and Wheatstone bridges based on spin-valves and magnetic tunnel junctions have been considered. In this sense, schematic-level simulations for integration in Austria Microsystems 0.35 mu m technology have been corroborated by means of experimental measurements with the help of printed circuit board prototypes and real GMR devices. Tables with relevant parameters (silicon area, power consumption, sensitivity etc.) have been constructed as practical tools for designers. Electric currents down to 2 mu A have been resolved in this way.
@article{ ISI:000340128500007,
Author = {De Marcellis, Andrea and Cubells-Beltran, Maria-Dolores and Reig, Candid
and Madrenas, Jordi and Zadov, Boris and Paperno, Eugene and Cardoso,
Susana and Freitas, Paulo P.},
Title = {{Quasi-digital front-ends for current measurement in integrated circuits
with giant magnetoresistance technology}},
Journal = {{IET CIRCUITS DEVICES \& SYSTEMS}},
Year = {{2014}},
Volume = {{8}},
Number = {{4}},
Pages = {{291-300}},
Month = {{JUL}},
Abstract = {{In this study, the authors report on two different electronic interfaces
for low-power integrated circuits electric current monitoring through
current-to-frequency (I-f) conversion schemes. This proposal displays
the intrinsic advantages of the quasi-digital systems regarding direct
interfacing and self-calibrating capabilities. In addition, as
current-sensing devices, they have made use of the giant
magnetoresistance (GMR) technology because of its high sensitivity and
compatibility with standard complementary metal oxide semiconductor
processes. Single elements and Wheatstone bridges based on spin-valves
and magnetic tunnel junctions have been considered. In this sense,
schematic-level simulations for integration in Austria Microsystems 0.35
mu m technology have been corroborated by means of experimental
measurements with the help of printed circuit board prototypes and real
GMR devices. Tables with relevant parameters (silicon area, power
consumption, sensitivity etc.) have been constructed as practical tools
for designers. Electric currents down to 2 mu A have been resolved in
this way.}},
DOI = {{10.1049/iet-cds.2013.0348}},
ISSN = {{1751-858X}},
EISSN = {{1751-8598}},
ResearcherID-Numbers = {{Reig, Candid/B-4253-2008
De Marcellis, Andrea/F-4961-2011
Freitas, Paulo J.P./B-6164-2013
Cubells-Beltran, Maria-Dolores/L-8508-2014
de Freitas, Susana Cardoso/B-6199-2013}},
ORCID-Numbers = {{Reig, Candid/0000-0001-8029-0068
De Marcellis, Andrea/0000-0003-2490-7486
Freitas, Paulo J.P./0000-0003-0015-1186
Cubells-Beltran, Maria-Dolores/0000-0002-7864-9593
de Freitas, Susana Cardoso/0000-0001-6913-6529}},
Unique-ID = {{ISI:000340128500007}},
}
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