Mechanisms of epitaxy and defects at the interface in ultrathin YSZ films on Si(001). de Coux, P., Bachelet, R., Gatel, C., Warot-Fonrose, B., Fontcuberta, J., & Sanchez, F. Crystengcomm, 14(23):7851--7855, 2012.
doi  abstract   bibtex   
Ultrathin YSZ epitaxial films have been deposited by pulsed laser deposition under ultra-high vacuum on Si(001) without removing its native oxide. It is found that YSZ grows amorphously while producing a progressive reduction of native SiOx, and above a thickness of 1.0-1.5, nm the whole YSZ film crystallises. Nanometric SiOx-free regions act as seeds for epitaxy and subsequent lateral crystallisation of the rest of the amorphous YSZ. With further YSZ deposition, SiOx is totally reduced with concomitant formation of a new interface between already existing crystalline YSZ film and Si substrate. Defective regions, with lattice parameter intermediate between Si and bulk YSZ, are periodically distributed along the SiOx-free interface.
@article{ de_coux_mechanisms_2012,
  title = {Mechanisms of epitaxy and defects at the interface in ultrathin {YSZ} films on Si(001)},
  volume = {14},
  issn = {1466-8033},
  doi = {10.1039/c2ce26155c},
  abstract = {Ultrathin {YSZ} epitaxial films have been deposited by pulsed laser deposition under ultra-high vacuum on Si(001) without removing its native oxide. It is found that {YSZ} grows amorphously while producing a progressive reduction of native {SiOx}, and above a thickness of 1.0-1.5, nm the whole {YSZ} film crystallises. Nanometric {SiOx-free} regions act as seeds for epitaxy and subsequent lateral crystallisation of the rest of the amorphous {YSZ.} With further {YSZ} deposition, {SiOx} is totally reduced with concomitant formation of a new interface between already existing crystalline {YSZ} film and Si substrate. Defective regions, with lattice parameter intermediate between Si and bulk {YSZ}, are periodically distributed along the {SiOx-free} interface.},
  language = {English},
  number = {23},
  journal = {Crystengcomm},
  author = {de Coux, Patricia and Bachelet, Romain and Gatel, Christophe and Warot-Fonrose, Benedicte and Fontcuberta, Josep and Sanchez, Florencio},
  year = {2012},
  keywords = {binary oxides, decomposition, growth, la2/3sr1/3mno3 thin-films, memory applications, microscopy, orientation, Silicon, siox layer, stabilized zirconia},
  pages = {7851--7855}
}

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