Mechanisms of epitaxy and defects at the interface in ultrathin YSZ films on Si(001). de Coux, P., Bachelet, R., Gatel, C., Warot-Fonrose, B., Fontcuberta, J., & Sanchez, F. Crystengcomm, 14(23):7851--7855, 2012. doi abstract bibtex Ultrathin YSZ epitaxial films have been deposited by pulsed laser deposition under ultra-high vacuum on Si(001) without removing its native oxide. It is found that YSZ grows amorphously while producing a progressive reduction of native SiOx, and above a thickness of 1.0-1.5, nm the whole YSZ film crystallises. Nanometric SiOx-free regions act as seeds for epitaxy and subsequent lateral crystallisation of the rest of the amorphous YSZ. With further YSZ deposition, SiOx is totally reduced with concomitant formation of a new interface between already existing crystalline YSZ film and Si substrate. Defective regions, with lattice parameter intermediate between Si and bulk YSZ, are periodically distributed along the SiOx-free interface.
@article{ de_coux_mechanisms_2012,
title = {Mechanisms of epitaxy and defects at the interface in ultrathin {YSZ} films on Si(001)},
volume = {14},
issn = {1466-8033},
doi = {10.1039/c2ce26155c},
abstract = {Ultrathin {YSZ} epitaxial films have been deposited by pulsed laser deposition under ultra-high vacuum on Si(001) without removing its native oxide. It is found that {YSZ} grows amorphously while producing a progressive reduction of native {SiOx}, and above a thickness of 1.0-1.5, nm the whole {YSZ} film crystallises. Nanometric {SiOx-free} regions act as seeds for epitaxy and subsequent lateral crystallisation of the rest of the amorphous {YSZ.} With further {YSZ} deposition, {SiOx} is totally reduced with concomitant formation of a new interface between already existing crystalline {YSZ} film and Si substrate. Defective regions, with lattice parameter intermediate between Si and bulk {YSZ}, are periodically distributed along the {SiOx-free} interface.},
language = {English},
number = {23},
journal = {Crystengcomm},
author = {de Coux, Patricia and Bachelet, Romain and Gatel, Christophe and Warot-Fonrose, Benedicte and Fontcuberta, Josep and Sanchez, Florencio},
year = {2012},
keywords = {binary oxides, decomposition, growth, la2/3sr1/3mno3 thin-films, memory applications, microscopy, orientation, Silicon, siox layer, stabilized zirconia},
pages = {7851--7855}
}
Downloads: 0
{"_id":{"_str":"536779a67d1b7b356e00171e"},"__v":0,"authorIDs":[],"author_short":["de<nbsp>Coux, P.","Bachelet, R.","Gatel, C.","Warot-Fonrose, B.","Fontcuberta, J.","Sanchez, F."],"bibbaseid":"denbspcoux-bachelet-gatel-warotfonrose-fontcuberta-sanchez-mechanismsofepitaxyanddefectsattheinterfaceinultrathinyszfilmsonsi001-2012","bibdata":{"abstract":"Ultrathin YSZ epitaxial films have been deposited by pulsed laser deposition under ultra-high vacuum on Si(001) without removing its native oxide. It is found that YSZ grows amorphously while producing a progressive reduction of native SiOx, and above a thickness of 1.0-1.5, nm the whole YSZ film crystallises. Nanometric SiOx-free regions act as seeds for epitaxy and subsequent lateral crystallisation of the rest of the amorphous YSZ. With further YSZ deposition, SiOx is totally reduced with concomitant formation of a new interface between already existing crystalline YSZ film and Si substrate. Defective regions, with lattice parameter intermediate between Si and bulk YSZ, are periodically distributed along the SiOx-free interface.","author":["de Coux, Patricia","Bachelet, Romain","Gatel, Christophe","Warot-Fonrose, Benedicte","Fontcuberta, Josep","Sanchez, Florencio"],"author_short":["de<nbsp>Coux, P.","Bachelet, R.","Gatel, C.","Warot-Fonrose, B.","Fontcuberta, J.","Sanchez, F."],"bibtex":"@article{ de_coux_mechanisms_2012,\n title = {Mechanisms of epitaxy and defects at the interface in ultrathin {YSZ} films on Si(001)},\n volume = {14},\n issn = {1466-8033},\n doi = {10.1039/c2ce26155c},\n abstract = {Ultrathin {YSZ} epitaxial films have been deposited by pulsed laser deposition under ultra-high vacuum on Si(001) without removing its native oxide. It is found that {YSZ} grows amorphously while producing a progressive reduction of native {SiOx}, and above a thickness of 1.0-1.5, nm the whole {YSZ} film crystallises. Nanometric {SiOx-free} regions act as seeds for epitaxy and subsequent lateral crystallisation of the rest of the amorphous {YSZ.} With further {YSZ} deposition, {SiOx} is totally reduced with concomitant formation of a new interface between already existing crystalline {YSZ} film and Si substrate. Defective regions, with lattice parameter intermediate between Si and bulk {YSZ}, are periodically distributed along the {SiOx-free} interface.},\n language = {English},\n number = {23},\n journal = {Crystengcomm},\n author = {de Coux, Patricia and Bachelet, Romain and Gatel, Christophe and Warot-Fonrose, Benedicte and Fontcuberta, Josep and Sanchez, Florencio},\n year = {2012},\n keywords = {binary oxides, decomposition, growth, la2/3sr1/3mno3 thin-films, memory applications, microscopy, orientation, Silicon, siox layer, stabilized zirconia},\n pages = {7851--7855}\n}","bibtype":"article","doi":"10.1039/c2ce26155c","id":"de_coux_mechanisms_2012","issn":"1466-8033","journal":"Crystengcomm","key":"de_coux_mechanisms_2012","keywords":"binary oxides, decomposition, growth, la2/3sr1/3mno3 thin-films, memory applications, microscopy, orientation, Silicon, siox layer, stabilized zirconia","language":"English","number":"23","pages":"7851--7855","title":"Mechanisms of epitaxy and defects at the interface in ultrathin YSZ films on Si(001)","type":"article","volume":"14","year":"2012","bibbaseid":"denbspcoux-bachelet-gatel-warotfonrose-fontcuberta-sanchez-mechanismsofepitaxyanddefectsattheinterfaceinultrathinyszfilmsonsi001-2012","role":"author","urls":{},"keyword":["binary oxides","decomposition","growth","la2/3sr1/3mno3 thin-films","memory applications","microscopy","orientation","Silicon","siox layer","stabilized zirconia"],"downloads":0},"bibtype":"article","biburl":"http://aurelien.masseboeuf.free.fr/Biblio/Test.bib","downloads":0,"keywords":["binary oxides","decomposition","growth","la2/3sr1/3mno3 thin-films","memory applications","microscopy","orientation","silicon","siox layer","stabilized zirconia"],"search_terms":["mechanisms","epitaxy","defects","interface","ultrathin","ysz","films","001","de<nbsp>coux","bachelet","gatel","warot-fonrose","fontcuberta","sanchez"],"title":"Mechanisms of epitaxy and defects at the interface in ultrathin YSZ films on Si(001)","year":2012,"dataSources":["nLho29PvMiq3Di5k6"]}