Implantation energy effect on photoluminescence spectroscopy of Si nanocrystals locally fabricated by stencil-masked ultra-low-energy ion-beam-synthesis in silica. Diaz, R., Suarez, C., Arbouet, A., Marty, R., Paillard, V., Gloux, F., Bonafos, C., Schamm-Chardon, S., Grisolia, J., Normand, P., Dimitrakis, P., & BenAssayag, G. Nuclear Instruments \& Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, 272:53--56, February, 2012. doi abstract bibtex The present paper focuses on the effect of the implantation energy in the fabrication of pockets of silicon nanocrystals (Si-NCs) by stencil-masked ultra-low-energy ion-beam-synthesis (ULE-IBS). Si ion implantation was carried out into 10 nm SiO2 layers using energies ranging from 1 up to 3 key and a fluence of 1 x 10(16) Sr+/cm(2). After mask removal the samples are furnace annealed at 1050 degrees C for 30 min under N-2 atmosphere. Control of Si-NCs characteristics was examined as a function of the stencil aperture size. Then, different patterns of Si-NCs pockets were synthesized such as squares and gratings of line arrays. Photoluminescence (PL) spectroscopy under a confocal microscope was employed to map the NCs pocket arrays. These PL images were found to perfectly mimic the mask geometry. A change in PL intensity and a blueshift of the PL energy peak were observed near the edge of the pockets. These local changes were attributed to both a smaller size and a higher density of Si-NCs in such areas, probably due to a local decrease of the implanted fluence. AFM measurements of the oxide swelling as a function of the elaboration conditions were combined to PL results to evaluate the real implanted fluence, which is lower than the nominal one. The implanted fluence was also found to decrease with decreasing aperture size, until a threshold for the absence of Si-NCs formation is reached in sub-micron patterns. (C) 2011 Elsevier B.V. All rights reserved.
@article{ diaz_implantation_2012,
title = {Implantation energy effect on photoluminescence spectroscopy of Si nanocrystals locally fabricated by stencil-masked ultra-low-energy ion-beam-synthesis in silica},
volume = {272},
issn = {0168-{583X}},
doi = {10.1016/j.nimb.2011.01.031},
abstract = {The present paper focuses on the effect of the implantation energy in the fabrication of pockets of silicon nanocrystals (Si-{NCs)} by stencil-masked ultra-low-energy ion-beam-synthesis ({ULE-IBS).} Si ion implantation was carried out into 10 nm {SiO2} layers using energies ranging from 1 up to 3 key and a fluence of 1 x 10(16) Sr+/cm(2). After mask removal the samples are furnace annealed at 1050 degrees C for 30 min under N-2 atmosphere. Control of Si-{NCs} characteristics was examined as a function of the stencil aperture size. Then, different patterns of Si-{NCs} pockets were synthesized such as squares and gratings of line arrays. Photoluminescence ({PL)} spectroscopy under a confocal microscope was employed to map the {NCs} pocket arrays. These {PL} images were found to perfectly mimic the mask geometry. A change in {PL} intensity and a blueshift of the {PL} energy peak were observed near the edge of the pockets. These local changes were attributed to both a smaller size and a higher density of Si-{NCs} in such areas, probably due to a local decrease of the implanted fluence. {AFM} measurements of the oxide swelling as a function of the elaboration conditions were combined to {PL} results to evaluate the real implanted fluence, which is lower than the nominal one. The implanted fluence was also found to decrease with decreasing aperture size, until a threshold for the absence of Si-{NCs} formation is reached in sub-micron patterns. (C) 2011 Elsevier {B.V.} All rights reserved.},
language = {English},
journal = {Nuclear Instruments \& Methods in Physics Research Section B-Beam Interactions with Materials and Atoms},
author = {Diaz, R. and Suarez, C. and Arbouet, A. and Marty, R. and Paillard, V. and Gloux, F. and Bonafos, C. and Schamm-Chardon, S. and Grisolia, J. and Normand, P. and Dimitrakis, P. and {BenAssayag}, G.},
month = {February},
year = {2012},
keywords = {Ion-beam processing, memory, nanostructure},
pages = {53--56}
}
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Control of Si-NCs characteristics was examined as a function of the stencil aperture size. Then, different patterns of Si-NCs pockets were synthesized such as squares and gratings of line arrays. Photoluminescence (PL) spectroscopy under a confocal microscope was employed to map the NCs pocket arrays. These PL images were found to perfectly mimic the mask geometry. A change in PL intensity and a blueshift of the PL energy peak were observed near the edge of the pockets. These local changes were attributed to both a smaller size and a higher density of Si-NCs in such areas, probably due to a local decrease of the implanted fluence. AFM measurements of the oxide swelling as a function of the elaboration conditions were combined to PL results to evaluate the real implanted fluence, which is lower than the nominal one. The implanted fluence was also found to decrease with decreasing aperture size, until a threshold for the absence of Si-NCs formation is reached in sub-micron patterns. (C) 2011 Elsevier B.V. All rights reserved.","author":["Diaz, R.","Suarez, C.","Arbouet, A.","Marty, R.","Paillard, V.","Gloux, F.","Bonafos, C.","Schamm-Chardon, S.","Grisolia, J.","Normand, P.","Dimitrakis, P.","BenAssayag, G."],"author_short":["Diaz, R.","Suarez, C.","Arbouet, A.","Marty, R.","Paillard, V.","Gloux, F.","Bonafos, C.","Schamm-Chardon, S.","Grisolia, J.","Normand, P.","Dimitrakis, P.","BenAssayag, G."],"bibtex":"@article{ diaz_implantation_2012,\n title = {Implantation energy effect on photoluminescence spectroscopy of Si nanocrystals locally fabricated by stencil-masked ultra-low-energy ion-beam-synthesis in silica},\n volume = {272},\n issn = {0168-{583X}},\n doi = {10.1016/j.nimb.2011.01.031},\n abstract = {The present paper focuses on the effect of the implantation energy in the fabrication of pockets of silicon nanocrystals (Si-{NCs)} by stencil-masked ultra-low-energy ion-beam-synthesis ({ULE-IBS).} Si ion implantation was carried out into 10 nm {SiO2} layers using energies ranging from 1 up to 3 key and a fluence of 1 x 10(16) Sr+/cm(2). After mask removal the samples are furnace annealed at 1050 degrees C for 30 min under N-2 atmosphere. Control of Si-{NCs} characteristics was examined as a function of the stencil aperture size. Then, different patterns of Si-{NCs} pockets were synthesized such as squares and gratings of line arrays. Photoluminescence ({PL)} spectroscopy under a confocal microscope was employed to map the {NCs} pocket arrays. These {PL} images were found to perfectly mimic the mask geometry. A change in {PL} intensity and a blueshift of the {PL} energy peak were observed near the edge of the pockets. These local changes were attributed to both a smaller size and a higher density of Si-{NCs} in such areas, probably due to a local decrease of the implanted fluence. {AFM} measurements of the oxide swelling as a function of the elaboration conditions were combined to {PL} results to evaluate the real implanted fluence, which is lower than the nominal one. The implanted fluence was also found to decrease with decreasing aperture size, until a threshold for the absence of Si-{NCs} formation is reached in sub-micron patterns. 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