@techreport{
 title = {Reactions at amorphous SiC / Ni interfaces Reactions at amorphous SiC / Ni interfaces},
 type = {techreport},
 year = {2012},
 identifiers = {[object Object]},
 keywords = {1999,amorphous,c,interfaces,journal of applied physics,ni,reactions,si},
 volume = {2636},
 issue = {1999},
 id = {ddc53997-545c-3174-a8ff-d49cbb8158fe},
 created = {2018-09-14T20:58:05.520Z},
 file_attached = {true},
 profile_id = {70644822-a92d-388e-a930-3d28afc76b1e},
 group_id = {f7d35d58-7823-3e09-9e83-2d24928a3f0e},
 last_modified = {2019-01-08T00:45:00.604Z},
 read = {false},
 starred = {false},
 authored = {false},
 confirmed = {true},
 hidden = {false},
 private_publication = {false},
 abstract = {When multilayer samples of polycrystalline Ni and amorphous SiC are heated, the sequence of phase formation initiates with a dissolution of Ni into the amorphous phase and is followed first by the formation of NiSi and then Ni 2 Si. Multilayer samples of a-SiC/Ni with modulation wavelengths of 83.9 nm and with the ratio of the thickness of the SiC layer to the Ni layer equal to 3.8 retain a multilayer structure even after they undergo two phase transitions. When annealing causes reactions to occur, the surface roughness, measured by atomic force microscopy AFM, increases and was correlated with similar increases in the interface width. AFM measurements may provide a convenient way to observe reactions at buried interfaces.},
 bibtype = {techreport},
 author = {Edelstein, A S and Gillespie, D J and Cheng, S F and Perepezko, J H and Landry, K}
}

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