Elucidating the charge carrier separation and working mechanism of CH3NH3PbI3−xCl x perovskite solar cells. Edri, E., Kirmayer, S., Mukhopadhyay, S., Gartsman, K., Hodes, G., & Cahen, D. Nature Communications, 5(1):3461, 12, 2014.
Website abstract bibtex Developments in organic-inorganic lead halide-based perovskite solar cells have been meteoric over the last 2 years, with small-area efficiencies surpassing 15%. We address the fundamental issue of how these cells work by applying a scanning electron microscopy-based technique to cell cross-sections. By mapping the variation in efficiency of charge separation and collection in the cross-sections, we show the presence of two prime high efficiency locations, one at/near the absorber/hole-blocking-layer, and the second at/near the absorber/electron-blocking-layer interfaces, with the former more pronounced. This 'twin-peaks' profile is characteristic of a p-i-n solar cell, with a layer of low-doped, high electronic quality semiconductor, between a p- and an n-layer. If the electron blocker is replaced by a gold contact, only a heterojunction at the absorber/hole-blocking interface remains. © 2014 Macmillan Publishers Limited. All rights reserved.
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title = {Elucidating the charge carrier separation and working mechanism of CH3NH3PbI3−xCl x perovskite solar cells},
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abstract = {Developments in organic-inorganic lead halide-based perovskite solar cells have been meteoric over the last 2 years, with small-area efficiencies surpassing 15%. We address the fundamental issue of how these cells work by applying a scanning electron microscopy-based technique to cell cross-sections. By mapping the variation in efficiency of charge separation and collection in the cross-sections, we show the presence of two prime high efficiency locations, one at/near the absorber/hole-blocking-layer, and the second at/near the absorber/electron-blocking-layer interfaces, with the former more pronounced. This 'twin-peaks' profile is characteristic of a p-i-n solar cell, with a layer of low-doped, high electronic quality semiconductor, between a p- and an n-layer. If the electron blocker is replaced by a gold contact, only a heterojunction at the absorber/hole-blocking interface remains. © 2014 Macmillan Publishers Limited. All rights reserved.},
bibtype = {article},
author = {Edri, Eran and Kirmayer, Saar and Mukhopadhyay, Sabyasachi and Gartsman, Konstantin and Hodes, Gary and Cahen, David},
journal = {Nature Communications},
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