Surface Shubnikov-de Haas oscillations and nonzero Berry phases of the topological hole conduction in Tl_(1-x)Bi_(1+x)Se2. Eguchi, G., Kuroda, K., Shirai, K., Kimura, A., & Shiraishi, M. Physical Review B, 90(20):201307, November, 2014.
Paper doi abstract bibtex We report the observation of two-dimensional Shubnikov–de Haas (SdH) oscillations in the topological insulator Tl1−xBi1+xSe2. Hall effect measurements exhibited electron-hole inversion in samples with bulk insulating properties. The SdH oscillations accompanying the hole conduction yielded a large surface carrier density of ns=5.1×1012 cm−2, with the Landau-level fan diagram exhibiting the π Berry phase. These results showed the electron-hole reversibility around the in-gap Dirac point and the hole conduction on the surface Dirac cone without involving the bulk metallic conduction.
@article{eguchi_surface_2014,
title = {Surface {Shubnikov}-de {Haas} oscillations and nonzero {Berry} phases of the topological hole conduction in {Tl}\_(1-x){Bi}\_(1+x){Se2}},
volume = {90},
url = {http://link.aps.org/doi/10.1103/PhysRevB.90.201307},
doi = {10.1103/PhysRevB.90.201307},
abstract = {We report the observation of two-dimensional Shubnikov–de Haas (SdH) oscillations in the topological insulator Tl1−xBi1+xSe2. Hall effect measurements exhibited electron-hole inversion in samples with bulk insulating properties. The SdH oscillations accompanying the hole conduction yielded a large surface carrier density of ns=5.1×1012 cm−2, with the Landau-level fan diagram exhibiting the π Berry phase. These results showed the electron-hole reversibility around the in-gap Dirac point and the hole conduction on the surface Dirac cone without involving the bulk metallic conduction.},
number = {20},
urldate = {2015-09-03},
journal = {Physical Review B},
author = {Eguchi, G. and Kuroda, K. and Shirai, K. and Kimura, A. and Shiraishi, M.},
month = nov,
year = {2014},
pages = {201307},
}
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