Ultra-wide-band ( gt;40 GHz) submicron InGaAs metal-semiconductor-metal photodetectors. E. H. Bottcher, Droge, E., Bimberg, D., Umbach, A., & Engel, H. IEEE Photonics Technology Letters, 8(9):1226–1228, September, 1996. doi abstract bibtex Submicron feature size InGaAs metal-semiconductor-metal (MSM) photodetectors with 3-dB bandwidths in excess of 40 GHz are demonstrated. Devices with a 0.3-μm-thick active layer and an interelectrode spacing of \textless0.5 μm show a roll-off of the frequency response of /spl les/2 dB up to 40 GHz when operated at 5-V bias under front illumination with 1.3-μm light.
@article{e._h._bottcher_ultra-wide-band_1996,
title = {Ultra-wide-band ( gt;40 {GHz}) submicron {InGaAs} metal-semiconductor-metal photodetectors},
volume = {8},
issn = {1041-1135},
doi = {10.1109/68.531844},
abstract = {Submicron feature size InGaAs metal-semiconductor-metal (MSM) photodetectors with 3-dB bandwidths in excess of 40 GHz are demonstrated. Devices with a 0.3-μm-thick active layer and an interelectrode spacing of {\textless}0.5 μm show a roll-off of the frequency response of /spl les/2 dB up to 40 GHz when operated at 5-V bias under front illumination with 1.3-μm light.},
number = {9},
journal = {IEEE Photonics Technology Letters},
author = {{E. H. Bottcher} and Droge, E. and Bimberg, D. and Umbach, A. and Engel, H.},
month = sep,
year = {1996},
keywords = {photodetectors, Bandwidth, Detectors, frequency response, Electrodes, /spl mu/m light, /spl mu/m-thick active layer, 0.3 mum, 0.5 mum, 1.3 mum, 40 GHz, 5 V, Capacitance, electrodes, Fabrication, front illumination, gallium arsenide, III-V semiconductors, indium compounds, Indium gallium arsenide, Indium phosphide, InGaAs, InGaAs metal-semiconductor-metal photodetectors, interelectrode spacing, metal-semiconductor-metal structures, MSM photodetectors, Optical waveguides, Photodetectors, roll-off, submicron feature size, Ultra wideband technology, ultra-wide-band},
pages = {1226--1228},
file = {IEEE Xplore Abstract Record:D\:\\Zotero\\storage\\A86ESKW6\\531844.html:text/html;IEEE Xplore Full Text PDF:D\:\\Zotero\\storage\\DX69CX2N\\Bottcher et al. - 1996 - Ultra-wide-band ( gt\;40 GHz) submicron InGaAs meta.pdf:application/pdf}
}
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Devices with a 0.3-μm-thick active layer and an interelectrode spacing of \\textless0.5 μm show a roll-off of the frequency response of /spl les/2 dB up to 40 GHz when operated at 5-V bias under front illumination with 1.3-μm light.","number":"9","journal":"IEEE Photonics Technology Letters","author":[{"firstnames":[],"propositions":[],"lastnames":["E. H. 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Devices with a 0.3-μm-thick active layer and an interelectrode spacing of {\\textless}0.5 μm show a roll-off of the frequency response of /spl les/2 dB up to 40 GHz when operated at 5-V bias under front illumination with 1.3-μm light.},\n\tnumber = {9},\n\tjournal = {IEEE Photonics Technology Letters},\n\tauthor = {{E. H. 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