CMOS low power baseband chain for a GSM/DECT multistandard receiver. Elwan, H., Ravindran, A., & Ismail, M. IEE Proceedings: Circuits, Devices and Systems, 2002.
abstract   bibtex   
A CMOS low power baseband chain for an integrated GSM/DECT multistandard receiver is presented. The chain uses a low power class AB digitally controlled filter and variable gain amplifier blocks to provide a low power, DSP controllable design solution. The chain and the building blocks are fabricated using standard N-well CMOS technology. Measurement results indicate that the chain can operate in GSM or DECT mode with a total standby current consumption less than 1.5 mA, while providing a gain control range from -6 dB to 23 dB in 1 dB steps. The chain achieves an input referred noise less than 31 nV/√Hz and an out-of-band IIP3 of more than 30 dBm.
@article{
 title = {CMOS low power baseband chain for a GSM/DECT multistandard receiver},
 type = {article},
 year = {2002},
 identifiers = {[object Object]},
 volume = {149},
 id = {b9d40efd-5fed-3b73-9599-5c78c6d0add6},
 created = {2017-12-04T05:34:55.831Z},
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 last_modified = {2017-12-04T05:34:55.831Z},
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 abstract = {A CMOS low power baseband chain for an integrated GSM/DECT multistandard receiver is presented. The chain uses a low power class AB digitally controlled filter and variable gain amplifier blocks to provide a low power, DSP controllable design solution. The chain and the building blocks are fabricated using standard N-well CMOS technology. Measurement results indicate that the chain can operate in GSM or DECT mode with a total standby current consumption less than 1.5 mA, while providing a gain control range from -6 dB to 23 dB in 1 dB steps. The chain achieves an input referred noise less than 31 nV/√Hz and an out-of-band IIP3 of more than 30 dBm.},
 bibtype = {article},
 author = {Elwan, H. and Ravindran, A. and Ismail, M.},
 journal = {IEE Proceedings: Circuits, Devices and Systems},
 number = {5-6}
}

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