Modeling of coupled TSVs in 3D ICs. Engin, A. & Raghavan, N. In Electromagnetic Compatibility (EMC), 2012 IEEE International Symposium on, pages 7-11, 2012.
doi  bibtex   
@INPROCEEDINGS{6351759, 
author={Engin, A.E. and Raghavan, N.S.}, 
booktitle={Electromagnetic Compatibility (EMC), 2012 IEEE International Symposium on}, 
title={Modeling of coupled TSVs in 3D ICs}, 
year={2012}, 
pages={7-11}, 
keywords={MOS capacitors;crosstalk;equivalent circuits;integrated circuit modelling;multiconductor transmission lines;three-dimensional integrated circuits;varactors;2D quasistatic simulations;3D IC;3D full-wave electromagnetic simulations;3D integrated circuit system;MIS transmission lines;circuit simulators;coupled TSV structure modelling;coupled through silicon via structures;crosstalk behavior analysis;dielectric quasiTEM modes;equivalent circuit model;lossy silicon medium;metal-insulator-semiconductor transmission lines;metal-oxide-semiconductor varactor capacitance;multiconductor transmission line approach;slow-wave TEM modes;Capacitance;Inductance;Integrated circuit modeling;Silicon;Solid modeling;Through-silicon vias;Transmission line matrix methods}, 
doi={10.1109/ISEMC.2012.6351759}, 
ISSN={2158-110X},}
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