High-fidelity polarization storage in a gigahertz bandwidth quantum memory. England, D., Michelberger, P., Champion, T., c Reim, K., Lee, K., Sprague, M., b Jin, X., d Langford, N., Kolthammer, W., Nunn, J., & Walmsley, I. Journal of Physics B: Atomic, Molecular and Optical Physics, 2012. cited By 8
High-fidelity polarization storage in a gigahertz bandwidth quantum memory [link]Paper  abstract   bibtex   
We demonstrate a dual-rail optical Raman memory inside a polarization interferometer; this enables us to store polarization-encoded information at GHz bandwidths in a room-temperature atomic ensemble. By performing full process tomography on the system, we measure up to 97 ± 1% process fidelity for the storage and retrieval process. At longer storage times, the process fidelity remains high, despite a loss of efficiency. The fidelity is 86 ± 4% for 1.5 μs storage time, which is 5000 times the pulse duration. Hence, high fidelity is combined with a large time-bandwidth product. This high performance, with an experimentally simple setup, demonstrates the suitability of the Raman memory for integration into large-scale quantum networks. © 2012 IOP Publishing Ltd.
@article{ England2012,
  author = {England, D.G.a , Michelberger, P.S.a , Champion, T.F.M.a , Reim,
	K.F.a c , Lee, K.C.a , Sprague, M.R.a , Jin, X.-M.a b , Langford,
	N.K.a d , Kolthammer, W.S.a , Nunn, J.a , Walmsley, I.A.a },
  title = {High-fidelity polarization storage in a gigahertz bandwidth quantum
	memory},
  journal = {Journal of Physics B: Atomic, Molecular and Optical Physics},
  year = {2012},
  volume = {45},
  number = {12},
  note = {cited By 8},
  abstract = {We demonstrate a dual-rail optical Raman memory inside a polarization
	interferometer; this enables us to store polarization-encoded information
	at GHz bandwidths in a room-temperature atomic ensemble. By performing
	full process tomography on the system, we measure up to 97 ± 1%
	process fidelity for the storage and retrieval process. At longer
	storage times, the process fidelity remains high, despite a loss
	of efficiency. The fidelity is 86 ± 4% for 1.5 μs storage time,
	which is 5000 times the pulse duration. Hence, high fidelity is combined
	with a large time-bandwidth product. This high performance, with
	an experimentally simple setup, demonstrates the suitability of the
	Raman memory for integration into large-scale quantum networks. ©
	2012 IOP Publishing Ltd.},
  affiliation = {Department of Physics, Clarendon Laboratory, University of Oxford,
	Oxford OX1 3PU, United Kingdom; Centre for Quantum Technologies,
	National University of Singapore, Singapore 117543, Singapore; Department
	of Physics, ETH Zürich, CH-8093 Zürich, Switzerland; Department
	of Physics, Royal Holloway, University of London, Egham Hill, Egham
	TW20 0EX, United Kingdom},
  art_number = {124008},
  document_type = {Article},
  owner = {paul},
  source = {Scopus},
  timestamp = {2015.02.17},
  url = {http://www.scopus.com/inward/record.url?eid=2-s2.0-84862225020&partnerID=40&md5=84e9b7ffd5f9cafe50a6641a1ea4586f}
}
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