High-fidelity polarization storage in a gigahertz bandwidth quantum memory. England, D., Michelberger, P., Champion, T., Reim, K. c, Lee, K., Sprague, M., Jin, X. b, Langford, N. d, Kolthammer, W., Nunn, J., & Walmsley, I. Journal of Physics B: Atomic, Molecular and Optical Physics, 2012.
High-fidelity polarization storage in a gigahertz bandwidth quantum memory [link]Paper  doi  abstract   bibtex   
We demonstrate a dual-rail optical Raman memory inside a polarization interferometer; this enables us to store polarization-encoded information at GHz bandwidths in a room-temperature atomic ensemble. By performing full process tomography on the system, we measure up to 97 ± 1% process fidelity for the storage and retrieval process. At longer storage times, the process fidelity remains high, despite a loss of efficiency. The fidelity is 86 ± 4% for 1.5 μs storage time, which is 5000 times the pulse duration. Hence, high fidelity is combined with a large time-bandwidth product. This high performance, with an experimentally simple setup, demonstrates the suitability of the Raman memory for integration into large-scale quantum networks. © 2012 IOP Publishing Ltd.
@Article{England2012,
  author        = {England, D.G.a , Michelberger, P.S.a , Champion, T.F.M.a , Reim, K.F.a c , Lee, K.C.a , Sprague, M.R.a , Jin, X.-M.a b , Langford, N.K.a d , Kolthammer, W.S.a , Nunn, J.a , Walmsley, I.A.a},
  journal       = {Journal of Physics B: Atomic, Molecular and Optical Physics},
  title         = {High-fidelity polarization storage in a gigahertz bandwidth quantum memory},
  year          = {2012},
  number        = {12},
  volume        = {45},
  abstract      = {We demonstrate a dual-rail optical Raman memory inside a polarization interferometer; this enables us to store polarization-encoded information at GHz bandwidths in a room-temperature atomic ensemble. By performing full process tomography on the system, we measure up to 97 ± 1% process fidelity for the storage and retrieval process. At longer storage times, the process fidelity remains high, despite a loss of efficiency. The fidelity is 86 ± 4% for 1.5 μs storage time, which is 5000 times the pulse duration. Hence, high fidelity is combined with a large time-bandwidth product. This high performance, with an experimentally simple setup, demonstrates the suitability of the Raman memory for integration into large-scale quantum networks. © 2012 IOP Publishing Ltd.},
  affiliation   = {Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU, United Kingdom; Centre for Quantum Technologies, National University of Singapore, Singapore 117543, Singapore; Department of Physics, ETH Zürich, CH-8093 Zürich, Switzerland; Department of Physics, Royal Holloway, University of London, Egham Hill, Egham TW20 0EX, United Kingdom},
  art_number    = {124008},
  document_type = {Article},
  doi           = {10.1088/0953-4075/45/12/124008},
  source        = {Scopus},
  timestamp     = {2016.03.02},
  url           = {http://www.scopus.com/inward/record.url?eid=2-s2.0-84862225020&partnerID=40&md5=84e9b7ffd5f9cafe50a6641a1ea4586f},
}
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