Fabrication of double sided YBa2Cu3O7 thin films on 2 inch diameter LaAlO3 wafers by direct wafer bonding. Eom, C., Huang, L, Rao, R., Tong, Q., & Gosele, U IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 7(2, 2):1244-1248, JUN, 1997. 1996 Applied Superconductivity Conference, PITTSBURGH, PA, AUG 25-30, 1996doi abstract bibtex We have demonstrated a novel fabrication process for double sided YBa2Cu3O7 (YBCO) thin film on 2 inch diameter (100) LaAlO3 wafers by direct wafer bonding. YBCO thin films were deposited on one side of two LaAlO3 wafers by a 90 degrees wafers were then polished on the opposite side and directly bonded at room temperature. We have also developed and optimized the process of LaAlO3 wafer bonding. The effect of annealing on the roughness, twin structure and bonding strength of bonded LaAlO3 wafers has been investigated. After annealing at 120 degrees C for 100 hours, the bonded LaAlO3 pairs remained intact even after immersion in deionized water for 20 hours. This process can be used for fabricating double sided high temperature superconducting thin films on heterostructure substrates, which have important applications in high frequency devices.
@article{ ISI:A1997XH86600033,
Author = {Eom, CB and Huang, L and Rao, RA and Tong, QY and Gosele, U},
Title = {{Fabrication of double sided YBa2Cu3O7 thin films on 2 inch diameter
LaAlO3 wafers by direct wafer bonding}},
Journal = {{IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY}},
Year = {{1997}},
Volume = {{7}},
Number = {{2, 2}},
Pages = {{1244-1248}},
Month = {{JUN}},
Note = {{1996 Applied Superconductivity Conference, PITTSBURGH, PA, AUG 25-30,
1996}},
Abstract = {{We have demonstrated a novel fabrication process for double sided
YBa2Cu3O7 (YBCO) thin film on 2 inch diameter (100) LaAlO3 wafers by
direct wafer bonding. YBCO thin films were deposited on one side of two
LaAlO3 wafers by a 90 degrees wafers were then polished on the opposite
side and directly bonded at room temperature. We have also developed and
optimized the process of LaAlO3 wafer bonding. The effect of annealing
on the roughness, twin structure and bonding strength of bonded LaAlO3
wafers has been investigated. After annealing at 120 degrees C for 100
hours, the bonded LaAlO3 pairs remained intact even after immersion in
deionized water for 20 hours. This process can be used for fabricating
double sided high temperature superconducting thin films on
heterostructure substrates, which have important applications in high
frequency devices.}},
DOI = {{10.1109/77.620739}},
ISSN = {{1051-8223}},
ResearcherID-Numbers = {{Eom, Chang-Beom/I-5567-2014}},
Unique-ID = {{ISI:A1997XH86600033}},
}
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