@inproceedings{ ISI:A1997BJ69L00028,
Author = {Eom, CB and Rao, RA and Gan, Q and Cava, RJ and Krajewski, JJ and
   Suzuki, Y and Gausepohl, SC and Lee, M},
Editor = {{Schlom, DG and Eom, CB and Hawley, ME and Foster, CM and Speck, JS}},
Title = {{Effect of lattice strain on growth mechanisms and electrical transport
   behavior of epitaxial CaRuO3 thin films}},
Booktitle = {{EPITAXIAL OXIDE THIN FILMS III}},
Series = {{MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS}},
Year = {{1997}},
Volume = {{474}},
Pages = {{199-204}},
Note = {{Symposium on Epitaxial Oxide Thin Films III, at the 1997 MRS Spring
   Meeting, SAN FRANCISCO, CA, MAR 31-APR 02, 1997}},
Organization = {{Mat Res Soc; Argonne Natl Lab; Hewlett Packard Labs; Kurt J Lesker Co;
   Los Alamos Natl Lab; Natl Sci Fdn; Oxford Instruments Amer Inc; Target
   Mat}},
Abstract = {{We have observed both metallic and semiconducting behavior in epitaxial
   thin films of the metallic oxide CaRuO3 deposited under identical
   conditions on (100) SrTiO3 substrates of varying crystalline quality.
   X-ray diffraction studies showed that while semiconducting films with
   enlarged unit cells were obtained on single crystal SrTiO3 substrates,
   metallic films with lattice parameters close to the bulk material grew
   on poor crystalline quality SrTiO3 substrates. The films deposited on
   (100) LaAlO3 substrates consistently showed metallic behavior. Atomic
   force microscope images suggest that the semiconducting firms had a
   coherent two dimensional nucleation. In contrast, three dimensional
   island-like incoherent growth was seen in the metallic films. It is
   believed that in the coherent films a strain induced substitution of the
   small Ru4+ cations by the larger Ca2+ cations occurs, breaking the
   conduction pathway within the three dimensional network of the RuO6
   octahedra and leading to a metal-insulator transition. This unique
   phenomenon - which is not observed in bulk material - can be significant
   in technologically important epitaxial perovskite oxide
   heterostructures.}},
DOI = {{10.1557/PROC-474-199}},
ISSN = {{0272-9172}},
ISBN = {{1-55899-378-9}},
ResearcherID-Numbers = {{Eom, Chang-Beom/I-5567-2014}},
Unique-ID = {{ISI:A1997BJ69L00028}},
}

{"_id":"EZqeiagqDXRoAJbnJ","bibbaseid":"eom-rao-gan-cava-krajewski-suzuki-gausepohl-lee-effectoflatticestrainongrowthmechanismsandelectricaltransportbehaviorofepitaxialcaruo3thinfilms-1997","downloads":0,"creationDate":"2018-09-17T23:43:10.502Z","title":"Effect of lattice strain on growth mechanisms and electrical transport behavior of epitaxial CaRuO3 thin films","author_short":["Eom, C.","Rao, R.","Gan, Q","Cava, R.","Krajewski, J.","Suzuki, Y","Gausepohl, S.","Lee, M"],"year":1997,"bibtype":"inproceedings","biburl":"http://oxide.engr.wisc.edu/newWebsite/papers/oxide.bib","bibdata":{"bibtype":"inproceedings","type":"inproceedings","author":[{"propositions":[],"lastnames":["Eom"],"firstnames":["CB"],"suffixes":[]},{"propositions":[],"lastnames":["Rao"],"firstnames":["RA"],"suffixes":[]},{"propositions":[],"lastnames":["Gan"],"firstnames":["Q"],"suffixes":[]},{"propositions":[],"lastnames":["Cava"],"firstnames":["RJ"],"suffixes":[]},{"propositions":[],"lastnames":["Krajewski"],"firstnames":["JJ"],"suffixes":[]},{"propositions":[],"lastnames":["Suzuki"],"firstnames":["Y"],"suffixes":[]},{"propositions":[],"lastnames":["Gausepohl"],"firstnames":["SC"],"suffixes":[]},{"propositions":[],"lastnames":["Lee"],"firstnames":["M"],"suffixes":[]}],"editor":[{"firstnames":[],"propositions":[],"lastnames":["Schlom, DG"],"suffixes":[]},{"propositions":[],"lastnames":["Eom"],"firstnames":["CB"],"suffixes":[]},{"propositions":[],"lastnames":["Hawley"],"firstnames":["ME"],"suffixes":[]},{"propositions":[],"lastnames":["Foster"],"firstnames":["CM"],"suffixes":[]},{"propositions":[],"lastnames":["Speck"],"firstnames":["JS"],"suffixes":[]}],"title":"Effect of lattice strain on growth mechanisms and electrical transport behavior of epitaxial CaRuO3 thin films","booktitle":"EPITAXIAL OXIDE THIN FILMS III","series":"MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS","year":"1997","volume":"474","pages":"199-204","note":"Symposium on Epitaxial Oxide Thin Films III, at the 1997 MRS Spring Meeting, SAN FRANCISCO, CA, MAR 31-APR 02, 1997","organization":"Mat Res Soc; Argonne Natl Lab; Hewlett Packard Labs; Kurt J Lesker Co; Los Alamos Natl Lab; Natl Sci Fdn; Oxford Instruments Amer Inc; Target Mat","abstract":"We have observed both metallic and semiconducting behavior in epitaxial thin films of the metallic oxide CaRuO3 deposited under identical conditions on (100) SrTiO3 substrates of varying crystalline quality. X-ray diffraction studies showed that while semiconducting films with enlarged unit cells were obtained on single crystal SrTiO3 substrates, metallic films with lattice parameters close to the bulk material grew on poor crystalline quality SrTiO3 substrates. The films deposited on (100) LaAlO3 substrates consistently showed metallic behavior. Atomic force microscope images suggest that the semiconducting firms had a coherent two dimensional nucleation. In contrast, three dimensional island-like incoherent growth was seen in the metallic films. It is believed that in the coherent films a strain induced substitution of the small Ru4+ cations by the larger Ca2+ cations occurs, breaking the conduction pathway within the three dimensional network of the RuO6 octahedra and leading to a metal-insulator transition. This unique phenomenon - which is not observed in bulk material - can be significant in technologically important epitaxial perovskite oxide heterostructures.","doi":"10.1557/PROC-474-199","issn":"0272-9172","isbn":"1-55899-378-9","researcherid-numbers":"Eom, Chang-Beom/I-5567-2014","unique-id":"ISI:A1997BJ69L00028","bibtex":"@inproceedings{ ISI:A1997BJ69L00028,\nAuthor = {Eom, CB and Rao, RA and Gan, Q and Cava, RJ and Krajewski, JJ and\n Suzuki, Y and Gausepohl, SC and Lee, M},\nEditor = {{Schlom, DG and Eom, CB and Hawley, ME and Foster, CM and Speck, JS}},\nTitle = {{Effect of lattice strain on growth mechanisms and electrical transport\n behavior of epitaxial CaRuO3 thin films}},\nBooktitle = {{EPITAXIAL OXIDE THIN FILMS III}},\nSeries = {{MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS}},\nYear = {{1997}},\nVolume = {{474}},\nPages = {{199-204}},\nNote = {{Symposium on Epitaxial Oxide Thin Films III, at the 1997 MRS Spring\n Meeting, SAN FRANCISCO, CA, MAR 31-APR 02, 1997}},\nOrganization = {{Mat Res Soc; Argonne Natl Lab; Hewlett Packard Labs; Kurt J Lesker Co;\n Los Alamos Natl Lab; Natl Sci Fdn; Oxford Instruments Amer Inc; Target\n Mat}},\nAbstract = {{We have observed both metallic and semiconducting behavior in epitaxial\n thin films of the metallic oxide CaRuO3 deposited under identical\n conditions on (100) SrTiO3 substrates of varying crystalline quality.\n X-ray diffraction studies showed that while semiconducting films with\n enlarged unit cells were obtained on single crystal SrTiO3 substrates,\n metallic films with lattice parameters close to the bulk material grew\n on poor crystalline quality SrTiO3 substrates. The films deposited on\n (100) LaAlO3 substrates consistently showed metallic behavior. Atomic\n force microscope images suggest that the semiconducting firms had a\n coherent two dimensional nucleation. In contrast, three dimensional\n island-like incoherent growth was seen in the metallic films. It is\n believed that in the coherent films a strain induced substitution of the\n small Ru4+ cations by the larger Ca2+ cations occurs, breaking the\n conduction pathway within the three dimensional network of the RuO6\n octahedra and leading to a metal-insulator transition. This unique\n phenomenon - which is not observed in bulk material - can be significant\n in technologically important epitaxial perovskite oxide\n heterostructures.}},\nDOI = {{10.1557/PROC-474-199}},\nISSN = {{0272-9172}},\nISBN = {{1-55899-378-9}},\nResearcherID-Numbers = {{Eom, Chang-Beom/I-5567-2014}},\nUnique-ID = {{ISI:A1997BJ69L00028}},\n}\n\n","author_short":["Eom, C.","Rao, R.","Gan, Q","Cava, R.","Krajewski, J.","Suzuki, Y","Gausepohl, S.","Lee, M"],"editor_short":["Schlom, DG","Eom, C.","Hawley, M.","Foster, C.","Speck, J."],"key":"ISI:A1997BJ69L00028","id":"ISI:A1997BJ69L00028","bibbaseid":"eom-rao-gan-cava-krajewski-suzuki-gausepohl-lee-effectoflatticestrainongrowthmechanismsandelectricaltransportbehaviorofepitaxialcaruo3thinfilms-1997","role":"author","urls":{},"downloads":0,"html":""},"search_terms":["effect","lattice","strain","growth","mechanisms","electrical","transport","behavior","epitaxial","caruo3","thin","films","eom","rao","gan","cava","krajewski","suzuki","gausepohl","lee"],"keywords":[],"authorIDs":[],"dataSources":["zArY7xMz8KdDswhhx"]}