Interplay between intrinsic defects, doping, and free carrier concentration in SrTiO3 thin films

Interplay between intrinsic defects, doping, and free carrier concentration in SrTiO3 thin films. Ertekin, E., Srinivasan, V., Ravichandran, J., Rossen, P. B., Siemons, W., Majumdar, A., Ramesh, R., & Grossman, J. C. Physical Review B, 85:195460, May 29, 2012, 2012.

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Using both computational and experimental analysis, we demonstrate a rich point-defect phase diagram in doped strontium titanate as a function of thermodynamic variables such as oxygen partial pressure and electronic chemical potential. Computational modeling of point-defect energetics demonstrates that a complex interplay exists between dopants, thermodynamic parameters, and intrinsic defects in thin films of SrTiO3 (STO). We synthesize STO thin films via pulsed laser deposition and explore this interplay between intrinsic defects, doping, compensation, and carrier concentration. Our point-defect analysis (i) demonstrates that careful control over growth conditions can result in the tunable presence of anion and cation vacancies, (ii) suggests that compensation mechanisms will pose intrinsic limits on the dopability of perovskites, and (iii) provides a guide for tailoring the properties of doped perovskite thin films.

@article {479,
	title = {Interplay between intrinsic defects, doping, and free carrier concentration in SrTiO3 thin films},
	journal = {Physical Review B},
	volume = {85},
	year = {2012},
	month = {May 29, 2012},
	pages = {195460},
	abstract = {<p>Using both computational and experimental analysis, we demonstrate a rich point-defect phase diagram in doped strontium titanate as a function of thermodynamic variables such as oxygen partial pressure and electronic chemical potential. Computational modeling of point-defect energetics demonstrates that a complex interplay exists between dopants, thermodynamic parameters, and intrinsic defects in thin films of SrTiO3 (STO). We synthesize STO thin films via pulsed laser deposition and explore this interplay between intrinsic defects, doping, compensation, and carrier concentration. Our point-defect analysis (i) demonstrates that careful control over growth conditions can result in the tunable presence of anion and cation vacancies, (ii) suggests that compensation mechanisms will pose intrinsic limits on the dopability of perovskites, and (iii) provides a guide for tailoring the properties of doped perovskite thin films.</p>
},
	url = {http://link.aps.org/doi/10.1103/PhysRevB.85.195460},
	author = {Ertekin, Elif and Srinivasan, Varadharajan and Ravichandran, Jayakanth and Rossen, Pim B. and Siemons, Wolter and Majumdar, Arun and Ramesh, Ramamoorthy and Grossman, Jeffrey C.}
}

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