Polarity Switching and Transient Responses in Single Nanotube Nanofluidic Transistors

Polarity Switching and Transient Responses in Single Nanotube Nanofluidic Transistors. Fan, R., Yue, M., Karnik, R., Majumdar, A., & Yang, P. Physical Review Letters, 95:086607, August 19, 2005, 2005.

Paper abstract bibtex

We report the integration of inorganic nanotubes into metal-oxide-solution field effect transistors (FETs) which exhibit rapid field effect modulation of ionic conductance. Surface functionalization, analogous to doping in semiconductors, can switch the nanofluidic transistors from p-type to ambipolar and n-type field effect transistors. Transient study reveals the kinetics of field effect modulation is controlled by ion-exchange step. Nanofluidic FETs have potential implications in subfemtoliter analytical technology and large-scale nanofluidic integration.

@article {627,
	title = {Polarity Switching and Transient Responses in Single Nanotube Nanofluidic Transistors},
	journal = {Physical Review Letters},
	volume = {95},
	year = {2005},
	month = {August 19, 2005},
	pages = {086607},
	abstract = {We report the integration of inorganic nanotubes into metal-oxide-solution field effect transistors (FETs) which exhibit rapid field effect modulation of ionic conductance. Surface functionalization, analogous to doping in semiconductors, can switch the nanofluidic transistors from p-type to ambipolar and n-type field effect transistors. Transient study reveals the kinetics of field effect modulation is controlled by ion-exchange step. Nanofluidic FETs have potential implications in subfemtoliter analytical technology and large-scale nanofluidic integration.},
	url = {http://link.aps.org/doi/10.1103/PhysRevLett.95.086607},
	author = {Fan, Rong and Yue, Min and Karnik, Rohit and Majumdar, Arun and Yang, Peidong}
}

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