Thermal transient measurement of insulated gate devices using the thermal properties of the channel resistance and parasitic elements. Farkas, G. & Simon, G. Microelectronics Journal, 46(12):1185-1194, 2015. Link Paper bibtex @article{journals/mj/FarkasS15,
added-at = {2016-01-06T00:00:00.000+0100},
author = {Farkas, Gabor and Simon, Gergely},
biburl = {http://www.bibsonomy.org/bibtex/25bece5a69770135b9d034d96da0b6578/dblp},
ee = {http://dx.doi.org/10.1016/j.mejo.2015.06.027},
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journal = {Microelectronics Journal},
keywords = {dblp},
number = 12,
pages = {1185-1194},
timestamp = {2016-01-07T11:38:11.000+0100},
title = {Thermal transient measurement of insulated gate devices using the thermal properties of the channel resistance and parasitic elements.},
url = {http://dblp.uni-trier.de/db/journals/mj/mj46.html#FarkasS15},
volume = 46,
year = 2015
}
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