Thermal transient measurement of insulated gate devices using the thermal properties of the channel resistance and parasitic elements. Farkas, G. & Simon, G. Microelectronics Journal, 46(12):1185-1194, 2015.
Thermal transient measurement of insulated gate devices using the thermal properties of the channel resistance and parasitic elements. [link]Link  Thermal transient measurement of insulated gate devices using the thermal properties of the channel resistance and parasitic elements. [link]Paper  bibtex   
@article{journals/mj/FarkasS15,
  added-at = {2016-01-06T00:00:00.000+0100},
  author = {Farkas, Gabor and Simon, Gergely},
  biburl = {http://www.bibsonomy.org/bibtex/25bece5a69770135b9d034d96da0b6578/dblp},
  ee = {http://dx.doi.org/10.1016/j.mejo.2015.06.027},
  interhash = {78eca6da6b1e41fb3ddc258fa9ae03d2},
  intrahash = {5bece5a69770135b9d034d96da0b6578},
  journal = {Microelectronics Journal},
  keywords = {dblp},
  number = 12,
  pages = {1185-1194},
  timestamp = {2016-01-07T11:38:11.000+0100},
  title = {Thermal transient measurement of insulated gate devices using the thermal properties of the channel resistance and parasitic elements.},
  url = {http://dblp.uni-trier.de/db/journals/mj/mj46.html#FarkasS15},
  volume = 46,
  year = 2015
}

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