@inproceedings{
 title = {Sputtered Ge-Si heteroepitaxial thin films for photodetection in third window},
 type = {inproceedings},
 year = {2008},
 pages = {270-272},
 websites = {http://www.scopus.com/inward/record.url?eid=2-s2.0-56249083887&partnerID=tZOtx3y1},
 publisher = {IEEE},
 id = {5735ca4a-a969-3a04-b576-513f3316313f},
 created = {2016-04-12T13:14:34.000Z},
 accessed = {2016-04-12},
 file_attached = {false},
 profile_id = {d636df8b-dbd7-349c-8172-9f253b58c3e8},
 group_id = {1e8503e9-5fe7-398e-b5b0-831268375e5f},
 last_modified = {2017-03-14T11:27:23.071Z},
 read = {false},
 starred = {false},
 authored = {false},
 confirmed = {true},
 hidden = {false},
 citation_key = {Fere2008},
 private_publication = {false},
 abstract = {DC-pulsed magnetron sputtering (PMS) allows to produce heteroepitaxial <i>p</i>-type Germanium thin films on 6rdquo Silicon wafers. Integrated <i>p</i>-<i>n</i> photodiodes, based on DC-PMS deposited Ge/Si heterojunctions, feature flat responsivity over the whole third communication window.},
 bibtype = {inproceedings},
 author = {Feré, Massimo and Lanata, Marta and Piccinin, Davide and Pietralunga, Silvia M. and Zappettini, Andrea and Ossi, Paolo M. and Martinelli, Mario},
 doi = {10.1109/GROUP4.2008.4638169},
 booktitle = {2008 5th International Conference on Group IV Photonics, GFP}
}

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