@ARTICLE{Fernandez-Delgado2016,
author={Fernández-Delgado, N.a  and Herrera, M.a  and Chisholm, M.F.b  and Kamarudin, M.A.c  d  and Zhuang, Q.D.c  and Hayne, M.c  and Molina, S.I.a },
title={Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots},
journal={Applied Surface Science},
year={2016},
doi={10.1016/j.apsusc.2016.04.131},
note={cited By 0; Article in Press},
url={https://www.scopus.com/inward/record.uri?eid=2-s2.0-84964608866&partnerID=40&md5=7fb17a8df082a4555f75c2989cc5999d},
affiliation={Department of Material Science, Metallurgical Engineering and Inorganic Chemistry, IMEYMAT, University of Cádiz, 11510, Puerto Real, Cádiz, Spain; Scanning Transmission Electron Microscopy Group, Oak Ridge National Laboratory, TN, USA; Department of Physics, Lancaster University, Lancaster, LA1 4YB, UK; Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400, UPM Serdang, Selangor, Malaysia},
abstract={In this work, the effect of the application of a thermal annealing on the structural properties of GaSb/GaAs quantum dots (QDs). 1 . 1Quantum dots. is analyzed by aberration corrected high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). 2 . 2High-angle annular dark-field scanning transmission electron microscopy. and electron energy loss spectroscopy (EELS). 3 . 3Electron energy loss spectroscopy. Our results show that the GaSb/GaAs QDs are more elongated after the annealing, and that the interfaces are less abrupt due to the Sb diffusion. We have also found a strong reduction in the misfit dislocation density with the annealing. The analysis by EELS of a threading dislocation has shown that the dislocation core is rich in Sb. In addition, the region of the GaAs substrate delimited by the threading dislocation is shown to be Sb-rich as well. An enhanced diffusion of Sb due to a mechanism assisted by the dislocation movement is discussed. © 2016 Elsevier B.V.},
author_keywords={GaSb;  Quantum dot;  Scanning transmission electron microscopy;  Thermal annealing},
document_type={Article in Press},
source={Scopus},
}

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Our results show that the GaSb/GaAs QDs are more elongated after the annealing, and that the interfaces are less abrupt due to the Sb diffusion. We have also found a strong reduction in the misfit dislocation density with the annealing. The analysis by EELS of a threading dislocation has shown that the dislocation core is rich in Sb. In addition, the region of the GaAs substrate delimited by the threading dislocation is shown to be Sb-rich as well. 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An enhanced diffusion of Sb due to a mechanism assisted by the dislocation movement is discussed. © 2016 Elsevier B.V.},\r\nauthor_keywords={GaSb; Quantum dot; Scanning transmission electron microscopy; Thermal annealing},\r\ndocument_type={Article in Press},\r\nsource={Scopus},\r\n}\r\n\r\n","author_short":["Fernández-Delgado, N.","Herrera, M.","Chisholm, M.","Kamarudin, M. d","Zhuang, Q.","Hayne, M.","Molina, S."],"key":"Fernandez-Delgado2016","id":"Fernandez-Delgado2016","bibbaseid":"fernndezdelgado-herrera-chisholm-kamarudin-zhuang-hayne-molina-effectofaninsituthermalannealingonthestructuralpropertiesofselfassembledgasbgaasquantumdots-2016","role":"author","urls":{"Paper":"https://www.scopus.com/inward/record.uri?eid=2-s2.0-84964608866&partnerID=40&md5=7fb17a8df082a4555f75c2989cc5999d"},"downloads":0,"html":""},"search_terms":["effect","situ","thermal","annealing","structural","properties","self","assembled","gasb","gaas","quantum","dots","fernández-delgado","herrera","chisholm","kamarudin","zhuang","hayne","molina"],"keywords":[],"authorIDs":[],"dataSources":["2saFJxc2c4Sa5wBqT"]}