A new model for in situ nitrogen incorporation into 4H-SiC during epitaxy. Ferro, G. & Chaussende, D. Scientific Reports, 2017. bibtex*[url=;booktitle=]
doi  bibtex   
@article{ferro_2017_srep43069,
	title = {A new model for in situ nitrogen incorporation into 4H-{SiC} during epitaxy},
	volume = {7},
	doi = {10.1038/srep43069},
	journal = {Scientific Reports},
	author = {Ferro, G. and Chaussende, D.},
	year = {2017},
	note = {bibtex*[url=;booktitle=]}
}

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