Pinched hysteresis with inverse-memristor frequency characteristics in some nonlinear circuit elements. Fouda, M. E., Elwakil, A. S., & Radwan, A. G. Microelectronics Journal, 46(9):834-838, 2015.
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Paper bibtex @article{journals/mj/FoudaER15,
added-at = {2015-11-24T00:00:00.000+0100},
author = {Fouda, Mohamed E. and Elwakil, Ahmed S. and Radwan, Ahmed Gomaa},
biburl = {http://www.bibsonomy.org/bibtex/2eef574e582c757758125c9cc39fb3197/dblp},
ee = {http://dx.doi.org/10.1016/j.mejo.2015.06.019},
interhash = {c2ef5f1b66e42f00d4619878ba13c31e},
intrahash = {eef574e582c757758125c9cc39fb3197},
journal = {Microelectronics Journal},
keywords = {dblp},
number = 9,
pages = {834-838},
timestamp = {2015-11-25T11:35:05.000+0100},
title = {Pinched hysteresis with inverse-memristor frequency characteristics in some nonlinear circuit elements.},
url = {http://dblp.uni-trier.de/db/journals/mj/mj46.html#FoudaER15},
volume = 46,
year = 2015
}
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