Pinched hysteresis with inverse-memristor frequency characteristics in some nonlinear circuit elements. Fouda, M. E., Elwakil, A. S., & Radwan, A. G. Microelectronics Journal, 46(9):834-838, 2015.
Pinched hysteresis with inverse-memristor frequency characteristics in some nonlinear circuit elements. [link]Link  Pinched hysteresis with inverse-memristor frequency characteristics in some nonlinear circuit elements. [link]Paper  bibtex   
@article{journals/mj/FoudaER15,
  added-at = {2015-11-24T00:00:00.000+0100},
  author = {Fouda, Mohamed E. and Elwakil, Ahmed S. and Radwan, Ahmed Gomaa},
  biburl = {http://www.bibsonomy.org/bibtex/2eef574e582c757758125c9cc39fb3197/dblp},
  ee = {http://dx.doi.org/10.1016/j.mejo.2015.06.019},
  interhash = {c2ef5f1b66e42f00d4619878ba13c31e},
  intrahash = {eef574e582c757758125c9cc39fb3197},
  journal = {Microelectronics Journal},
  keywords = {dblp},
  number = 9,
  pages = {834-838},
  timestamp = {2015-11-25T11:35:05.000+0100},
  title = {Pinched hysteresis with inverse-memristor frequency characteristics in some nonlinear circuit elements.},
  url = {http://dblp.uni-trier.de/db/journals/mj/mj46.html#FoudaER15},
  volume = 46,
  year = 2015
}

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