Visualization of dielectric constant-electric field-temperature phase maps for imprinted relaxor ferroelectric thin films. Frederick, J. C., Kim, T. H., Maeng, W., Brewer, A. A., Podkaminer, J. P., Saenrang, W., Vaithyanathan, V., Li, F., Chen, L., Schlom, D. G., Trolier-McKinstry, S., Rzchowski, M. S., & Eom, C. B. APPLIED PHYSICS LETTERS, MAR 28, 2016. doi abstract bibtex The dielectric phase transition behavior of imprinted lead magnesium niobate-lead titanate relaxor ferroelectric thin films was mapped as a function of temperature and dc bias. To compensate for the presence of internal fields, an external electric bias was applied while measuring dielectric responses. The constructed three-dimensional dielectric maps provide insight into the dielectric behaviors of relaxor ferroelectric films as well as the temperature stability of the imprint. The transition temperature and diffuseness of the dielectric response correlate with crystallographic disorder resulting from strain and defects in the films grown on strontium titanate and silicon substrates; the latter was shown to induce a greater degree of disorder in the film as well as a dielectric response lower in magnitude and more diffuse in nature over the same temperature region. Strong and stable imprint was exhibited in both films and can be utilized to enhance the operational stability of piezoelectric devices through domain self-poling. (C) 2016 AIP Publishing LLC.
@article{ ISI:000373601400033,
Author = {Frederick, J. C. and Kim, T. H. and Maeng, W. and Brewer, A. A. and
Podkaminer, J. P. and Saenrang, W. and Vaithyanathan, V. and Li, F. and
Chen, L-Q. and Schlom, D. G. and Trolier-McKinstry, S. and Rzchowski, M.
S. and Eom, C. B.},
Title = {{Visualization of dielectric constant-electric field-temperature phase
maps for imprinted relaxor ferroelectric thin films}},
Journal = {{APPLIED PHYSICS LETTERS}},
Year = {{2016}},
Volume = {{108}},
Number = {{13}},
Month = {{MAR 28}},
Abstract = {{The dielectric phase transition behavior of imprinted lead magnesium
niobate-lead titanate relaxor ferroelectric thin films was mapped as a
function of temperature and dc bias. To compensate for the presence of
internal fields, an external electric bias was applied while measuring
dielectric responses. The constructed three-dimensional dielectric maps
provide insight into the dielectric behaviors of relaxor ferroelectric
films as well as the temperature stability of the imprint. The
transition temperature and diffuseness of the dielectric response
correlate with crystallographic disorder resulting from strain and
defects in the films grown on strontium titanate and silicon substrates;
the latter was shown to induce a greater degree of disorder in the film
as well as a dielectric response lower in magnitude and more diffuse in
nature over the same temperature region. Strong and stable imprint was
exhibited in both films and can be utilized to enhance the operational
stability of piezoelectric devices through domain self-poling. (C) 2016
AIP Publishing LLC.}},
DOI = {{10.1063/1.4944774}},
Article-Number = {{132902}},
ISSN = {{0003-6951}},
EISSN = {{1077-3118}},
ResearcherID-Numbers = {{Li, Fei/C-1423-2009
Chen, LongQing/I-7536-2012
Eom, Chang-Beom/I-5567-2014
}},
ORCID-Numbers = {{Li, Fei/0000-0002-4572-0322
Chen, LongQing/0000-0003-3359-3781
Trolier-McKinstry, Susan/0000-0002-7267-9281}},
Unique-ID = {{ISI:000373601400033}},
}
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{"_id":"4p8nvzKsu4vtvENc4","bibbaseid":"frederick-kim-maeng-brewer-podkaminer-saenrang-vaithyanathan-li-etal-visualizationofdielectricconstantelectricfieldtemperaturephasemapsforimprintedrelaxorferroelectricthinfilms-2016","downloads":0,"creationDate":"2018-09-17T23:43:09.067Z","title":"Visualization of dielectric constant-electric field-temperature phase maps for imprinted relaxor ferroelectric thin films","author_short":["Frederick, J. C.","Kim, T. H.","Maeng, W.","Brewer, A. A.","Podkaminer, J. P.","Saenrang, W.","Vaithyanathan, V.","Li, F.","Chen, L.","Schlom, D. G.","Trolier-McKinstry, S.","Rzchowski, M. S.","Eom, C. B."],"year":2016,"bibtype":"article","biburl":"http://oxide.engr.wisc.edu/newWebsite/papers/oxide.bib","bibdata":{"bibtype":"article","type":"article","author":[{"propositions":[],"lastnames":["Frederick"],"firstnames":["J.","C."],"suffixes":[]},{"propositions":[],"lastnames":["Kim"],"firstnames":["T.","H."],"suffixes":[]},{"propositions":[],"lastnames":["Maeng"],"firstnames":["W."],"suffixes":[]},{"propositions":[],"lastnames":["Brewer"],"firstnames":["A.","A."],"suffixes":[]},{"propositions":[],"lastnames":["Podkaminer"],"firstnames":["J.","P."],"suffixes":[]},{"propositions":[],"lastnames":["Saenrang"],"firstnames":["W."],"suffixes":[]},{"propositions":[],"lastnames":["Vaithyanathan"],"firstnames":["V."],"suffixes":[]},{"propositions":[],"lastnames":["Li"],"firstnames":["F."],"suffixes":[]},{"propositions":[],"lastnames":["Chen"],"firstnames":["L-Q."],"suffixes":[]},{"propositions":[],"lastnames":["Schlom"],"firstnames":["D.","G."],"suffixes":[]},{"propositions":[],"lastnames":["Trolier-McKinstry"],"firstnames":["S."],"suffixes":[]},{"propositions":[],"lastnames":["Rzchowski"],"firstnames":["M.","S."],"suffixes":[]},{"propositions":[],"lastnames":["Eom"],"firstnames":["C.","B."],"suffixes":[]}],"title":"Visualization of dielectric constant-electric field-temperature phase maps for imprinted relaxor ferroelectric thin films","journal":"APPLIED PHYSICS LETTERS","year":"2016","volume":"108","number":"13","month":"MAR 28","abstract":"The dielectric phase transition behavior of imprinted lead magnesium niobate-lead titanate relaxor ferroelectric thin films was mapped as a function of temperature and dc bias. To compensate for the presence of internal fields, an external electric bias was applied while measuring dielectric responses. The constructed three-dimensional dielectric maps provide insight into the dielectric behaviors of relaxor ferroelectric films as well as the temperature stability of the imprint. The transition temperature and diffuseness of the dielectric response correlate with crystallographic disorder resulting from strain and defects in the films grown on strontium titanate and silicon substrates; the latter was shown to induce a greater degree of disorder in the film as well as a dielectric response lower in magnitude and more diffuse in nature over the same temperature region. Strong and stable imprint was exhibited in both films and can be utilized to enhance the operational stability of piezoelectric devices through domain self-poling. (C) 2016 AIP Publishing LLC.","doi":"10.1063/1.4944774","article-number":"132902","issn":"0003-6951","eissn":"1077-3118","researcherid-numbers":"Li, Fei/C-1423-2009 Chen, LongQing/I-7536-2012 Eom, Chang-Beom/I-5567-2014 ","orcid-numbers":"Li, Fei/0000-0002-4572-0322 Chen, LongQing/0000-0003-3359-3781 Trolier-McKinstry, Susan/0000-0002-7267-9281","unique-id":"ISI:000373601400033","bibtex":"@article{ ISI:000373601400033,\nAuthor = {Frederick, J. C. and Kim, T. H. and Maeng, W. and Brewer, A. A. and\n Podkaminer, J. P. and Saenrang, W. and Vaithyanathan, V. and Li, F. and\n Chen, L-Q. and Schlom, D. G. and Trolier-McKinstry, S. and Rzchowski, M.\n S. and Eom, C. B.},\nTitle = {{Visualization of dielectric constant-electric field-temperature phase\n maps for imprinted relaxor ferroelectric thin films}},\nJournal = {{APPLIED PHYSICS LETTERS}},\nYear = {{2016}},\nVolume = {{108}},\nNumber = {{13}},\nMonth = {{MAR 28}},\nAbstract = {{The dielectric phase transition behavior of imprinted lead magnesium\n niobate-lead titanate relaxor ferroelectric thin films was mapped as a\n function of temperature and dc bias. To compensate for the presence of\n internal fields, an external electric bias was applied while measuring\n dielectric responses. The constructed three-dimensional dielectric maps\n provide insight into the dielectric behaviors of relaxor ferroelectric\n films as well as the temperature stability of the imprint. The\n transition temperature and diffuseness of the dielectric response\n correlate with crystallographic disorder resulting from strain and\n defects in the films grown on strontium titanate and silicon substrates;\n the latter was shown to induce a greater degree of disorder in the film\n as well as a dielectric response lower in magnitude and more diffuse in\n nature over the same temperature region. Strong and stable imprint was\n exhibited in both films and can be utilized to enhance the operational\n stability of piezoelectric devices through domain self-poling. (C) 2016\n AIP Publishing LLC.}},\nDOI = {{10.1063/1.4944774}},\nArticle-Number = {{132902}},\nISSN = {{0003-6951}},\nEISSN = {{1077-3118}},\nResearcherID-Numbers = {{Li, Fei/C-1423-2009\n Chen, LongQing/I-7536-2012\n Eom, Chang-Beom/I-5567-2014\n }},\nORCID-Numbers = {{Li, Fei/0000-0002-4572-0322\n Chen, LongQing/0000-0003-3359-3781\n Trolier-McKinstry, Susan/0000-0002-7267-9281}},\nUnique-ID = {{ISI:000373601400033}},\n}\n\n","author_short":["Frederick, J. C.","Kim, T. H.","Maeng, W.","Brewer, A. A.","Podkaminer, J. P.","Saenrang, W.","Vaithyanathan, V.","Li, F.","Chen, L.","Schlom, D. G.","Trolier-McKinstry, S.","Rzchowski, M. S.","Eom, C. B."],"key":"ISI:000373601400033","id":"ISI:000373601400033","bibbaseid":"frederick-kim-maeng-brewer-podkaminer-saenrang-vaithyanathan-li-etal-visualizationofdielectricconstantelectricfieldtemperaturephasemapsforimprintedrelaxorferroelectricthinfilms-2016","role":"author","urls":{},"downloads":0,"html":""},"search_terms":["visualization","dielectric","constant","electric","field","temperature","phase","maps","imprinted","relaxor","ferroelectric","thin","films","frederick","kim","maeng","brewer","podkaminer","saenrang","vaithyanathan","li","chen","schlom","trolier-mckinstry","rzchowski","eom"],"keywords":[],"authorIDs":[],"dataSources":["zArY7xMz8KdDswhhx"]}