Visualization of dielectric constant-electric field-temperature phase maps for imprinted relaxor ferroelectric thin films. Frederick, J. C., Kim, T. H., Maeng, W., Brewer, A. A., Podkaminer, J. P., Saenrang, W., Vaithyanathan, V., Li, F., Chen, L., Schlom, D. G., Trolier-McKinstry, S., Rzchowski, M. S., & Eom, C. B. APPLIED PHYSICS LETTERS, MAR 28, 2016.
doi  abstract   bibtex   
The dielectric phase transition behavior of imprinted lead magnesium niobate-lead titanate relaxor ferroelectric thin films was mapped as a function of temperature and dc bias. To compensate for the presence of internal fields, an external electric bias was applied while measuring dielectric responses. The constructed three-dimensional dielectric maps provide insight into the dielectric behaviors of relaxor ferroelectric films as well as the temperature stability of the imprint. The transition temperature and diffuseness of the dielectric response correlate with crystallographic disorder resulting from strain and defects in the films grown on strontium titanate and silicon substrates; the latter was shown to induce a greater degree of disorder in the film as well as a dielectric response lower in magnitude and more diffuse in nature over the same temperature region. Strong and stable imprint was exhibited in both films and can be utilized to enhance the operational stability of piezoelectric devices through domain self-poling. (C) 2016 AIP Publishing LLC.
@article{ ISI:000373601400033,
Author = {Frederick, J. C. and Kim, T. H. and Maeng, W. and Brewer, A. A. and
   Podkaminer, J. P. and Saenrang, W. and Vaithyanathan, V. and Li, F. and
   Chen, L-Q. and Schlom, D. G. and Trolier-McKinstry, S. and Rzchowski, M.
   S. and Eom, C. B.},
Title = {{Visualization of dielectric constant-electric field-temperature phase
   maps for imprinted relaxor ferroelectric thin films}},
Journal = {{APPLIED PHYSICS LETTERS}},
Year = {{2016}},
Volume = {{108}},
Number = {{13}},
Month = {{MAR 28}},
Abstract = {{The dielectric phase transition behavior of imprinted lead magnesium
   niobate-lead titanate relaxor ferroelectric thin films was mapped as a
   function of temperature and dc bias. To compensate for the presence of
   internal fields, an external electric bias was applied while measuring
   dielectric responses. The constructed three-dimensional dielectric maps
   provide insight into the dielectric behaviors of relaxor ferroelectric
   films as well as the temperature stability of the imprint. The
   transition temperature and diffuseness of the dielectric response
   correlate with crystallographic disorder resulting from strain and
   defects in the films grown on strontium titanate and silicon substrates;
   the latter was shown to induce a greater degree of disorder in the film
   as well as a dielectric response lower in magnitude and more diffuse in
   nature over the same temperature region. Strong and stable imprint was
   exhibited in both films and can be utilized to enhance the operational
   stability of piezoelectric devices through domain self-poling. (C) 2016
   AIP Publishing LLC.}},
DOI = {{10.1063/1.4944774}},
Article-Number = {{132902}},
ISSN = {{0003-6951}},
EISSN = {{1077-3118}},
ResearcherID-Numbers = {{Li, Fei/C-1423-2009
   Chen, LongQing/I-7536-2012
   Eom, Chang-Beom/I-5567-2014
   }},
ORCID-Numbers = {{Li, Fei/0000-0002-4572-0322
   Chen, LongQing/0000-0003-3359-3781
   Trolier-McKinstry, Susan/0000-0002-7267-9281}},
Unique-ID = {{ISI:000373601400033}},
}

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