Modified energetics and growth kinetics on H-terminated GaAs (110). Galiana, B., Benedicto, M., Lorbek, S., Hlawacek, G., Teichert, C., & Tejedor, P. Journal of Chemical Physics, 139:164712, 2013. ![Modified energetics and growth kinetics on H-terminated GaAs (110) [pdf]](https://bibbase.org/img/filetypes/pdf.svg "pdf")
Paper abstract bibtex Atomic hydrogen modification of the surface energy of GaAs (110) epilayers, grown at high tem- peratures from molecular beams of Ga and As4, has been investigated by friction force microscopy (FFM). The reduction of the friction force observed with longer exposures to the H beam has been correlated with the lowering of the surface energy originated by the progressive de-relaxation of the GaAs (110) surface occurring upon H chemisorption. Our results indicate that the H-terminated GaAs (110) epilayers are more stable than the As-stabilized ones, with the minimum surface en- ergy value of 31 meV/Å2 measured for the fully hydrogenated surface. A significant reduction of the Ga diffusion length on the H-terminated surface irrespective of H coverage has been calculated from the FFM data, consistent with the layer-by-layer growth mode and the greater As incorpora- tion coefficient determined from real-time reflection high-energy electron diffraction studies.Arsenic incorporation through direct dissociative chemisorption of single As4 molecules mediated by H on the GaAs (110) surface has been proposed as the most likely explanation for the changes in surface kinetics observed.
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abstract = {Atomic hydrogen modification of the surface energy of GaAs (110) epilayers, grown at high tem- peratures from molecular beams of Ga and As4, has been investigated by friction force microscopy (FFM). The reduction of the friction force observed with longer exposures to the H beam has been correlated with the lowering of the surface energy originated by the progressive de-relaxation of the GaAs (110) surface occurring upon H chemisorption. Our results indicate that the H-terminated GaAs (110) epilayers are more stable than the As-stabilized ones, with the minimum surface en- ergy value of 31 meV/Å2 measured for the fully hydrogenated surface. A significant reduction of the Ga diffusion length on the H-terminated surface irrespective of H coverage has been calculated from the FFM data, consistent with the layer-by-layer growth mode and the greater As incorpora- tion coefficient determined from real-time reflection high-energy electron diffraction studies.Arsenic incorporation through direct dissociative chemisorption of single As4 molecules mediated by H on the GaAs (110) surface has been proposed as the most likely explanation for the changes in surface kinetics observed.},
bibtype = {article},
author = {Galiana, B and Benedicto, M and Lorbek, Stefan and Hlawacek, Gregor and Teichert, Christian and Tejedor, Paloma},
journal = {Journal of Chemical Physics}
}
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