Ferroelastic domain switching dynamics under electrical and mechanical excitations

Ferroelastic domain switching dynamics under electrical and mechanical excitations. Gao, P., Britson, J., Nelson, C. T., Jokisaari, J. R., Duan, C., Trassin, M., Baek, S., Guo, H., Li, L., Wang, Y., Chu, Y., Minor, A. M., Eom, C., Ramesh, R., Chen, L., & Pan, X. NATURE COMMUNICATIONS, MAY, 2014.
doi abstract bibtex

In thin film ferroelectric devices, switching of ferroelastic domains can significantly enhance electromechanical response. Previous studies have shown disagreement regarding the mobility or immobility of ferroelastic domain walls, indicating that switching behaviour strongly depends on specific microstructures in ferroelectric systems. Here we study the switching dynamics of individual ferroelastic domains in thin Pb(Zr-0.2, Ti-0.8)O-3 films under electrical and mechanical excitations by using in situ transmission electron microscopy and phase-field modelling. We find that ferroelastic domains can be effectively and permanently stabilized by dislocations at the substrate interface while similar domains at free surfaces without pinning dislocations can be removed by either electric or stress fields. For both electrical and mechanical switching, ferroelastic switching is found to occur most readily at the highly active needle points in ferroelastic domains. Our results provide new insights into the understanding of polarization switching dynamics as well as the engineering of ferroelectric devices.

@article{ ISI:000337372200012,
Author = {Gao, Peng and Britson, Jason and Nelson, Christopher T. and Jokisaari,
   Jacob R. and Duan, Chen and Trassin, Morgan and Baek, Seung-Hyub and
   Guo, Hua and Li, Linze and Wang, Yiran and Chu, Ying-Hao and Minor,
   Andrew M. and Eom, Chang-Beom and Ramesh, Ramamoorthy and Chen,
   Long-Qing and Pan, Xiaoqing},
Title = {{Ferroelastic domain switching dynamics under electrical and mechanical
   excitations}},
Journal = {{NATURE COMMUNICATIONS}},
Year = {{2014}},
Volume = {{5}},
Month = {{MAY}},
Abstract = {{In thin film ferroelectric devices, switching of ferroelastic domains
   can significantly enhance electromechanical response. Previous studies
   have shown disagreement regarding the mobility or immobility of
   ferroelastic domain walls, indicating that switching behaviour strongly
   depends on specific microstructures in ferroelectric systems. Here we
   study the switching dynamics of individual ferroelastic domains in thin
   Pb(Zr-0.2, Ti-0.8)O-3 films under electrical and mechanical excitations
   by using in situ transmission electron microscopy and phase-field
   modelling. We find that ferroelastic domains can be effectively and
   permanently stabilized by dislocations at the substrate interface while
   similar domains at free surfaces without pinning dislocations can be
   removed by either electric or stress fields. For both electrical and
   mechanical switching, ferroelastic switching is found to occur most
   readily at the highly active needle points in ferroelastic domains. Our
   results provide new insights into the understanding of polarization
   switching dynamics as well as the engineering of ferroelectric devices.}},
DOI = {{10.1038/ncomms4801}},
Article-Number = {{3801}},
ISSN = {{2041-1723}},
ResearcherID-Numbers = {{Chen, LongQing/I-7536-2012
   Foundry, Molecular/G-9968-2014
   Eom, Chang-Beom/I-5567-2014
   Gao, Peng/B-4675-2012
   Ying-Hao, Chu/A-4204-2008
   }},
ORCID-Numbers = {{Chen, LongQing/0000-0003-3359-3781
   Ying-Hao, Chu/0000-0002-3435-9084
   Baek, Seung-Hyub/0000-0002-3187-6596
   Li, Linze/0000-0001-5362-8991}},
Unique-ID = {{ISI:000337372200012}},
}

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