In Depth Spatially Inhomogeneous Phase Transition in Epitaxial MnAs Film on GaAs(001). Gatel, C., Fu, X., Serin, V., Eddrief, M., Etgens, V., & Warot-Fonrose, B. Nano Letters, 17(4):2460–2466, April, 2017. ![In Depth Spatially Inhomogeneous Phase Transition in Epitaxial MnAs Film on GaAs(001) [link]](https://bibbase.org/img/filetypes/link.svg "link")
Paper doi abstract bibtex Most studies on MnAs material in its bulk form have been focused on its temperature-dependent structural phase transition accompanied by a magnetic one. Magnetostructural phase transition parameters in thin MnAs films grown on substrates present however some differences from the bulk behavior, and local studies become mandatory for a deeper understanding of the mechanisms involved within the transition. Up to now, only surface techniques have been carried out, while the transition is a three-dimensional phenomenon. We therefore developed an original nanometer scale methodology using electron holography to investigate the phase transition in an epitaxial MnAs thin film on GaAs(001) from the cross-section view. Using quantitative magnetic maps recorded at the nanometer scale as a function of the temperature, our work provides a direct in situ observation of the inhomogeneous spatial distribution of the transition in the layer depth and brings new insights on the fundamental transition mechanisms.
@article{gatel_depth_2017,
title = {In {Depth} {Spatially} {Inhomogeneous} {Phase} {Transition} in {Epitaxial} {MnAs} {Film} on {GaAs}(001)},
volume = {17},
issn = {1530-6984},
url = {http://dx.doi.org/10.1021/acs.nanolett.7b00144},
doi = {10.1021/acs.nanolett.7b00144},
abstract = {Most studies on MnAs material in its bulk form have been focused on its temperature-dependent structural phase transition accompanied by a magnetic one. Magnetostructural phase transition parameters in thin MnAs films grown on substrates present however some differences from the bulk behavior, and local studies become mandatory for a deeper understanding of the mechanisms involved within the transition. Up to now, only surface techniques have been carried out, while the transition is a three-dimensional phenomenon. We therefore developed an original nanometer scale methodology using electron holography to investigate the phase transition in an epitaxial MnAs thin film on GaAs(001) from the cross-section view. Using quantitative magnetic maps recorded at the nanometer scale as a function of the temperature, our work provides a direct in situ observation of the inhomogeneous spatial distribution of the transition in the layer depth and brings new insights on the fundamental transition mechanisms.},
number = {4},
urldate = {2017-10-02},
journal = {Nano Letters},
author = {Gatel, C. and Fu, X. and Serin, V. and Eddrief, M. and Etgens, V. and Warot-Fonrose, B.},
month = apr,
year = {2017},
pages = {2460--2466},
}
Downloads: 0
{"_id":"cYWxemzbhbkM5Np67","bibbaseid":"gatel-fu-serin-eddrief-etgens-warotfonrose-indepthspatiallyinhomogeneousphasetransitioninepitaxialmnasfilmongaas001-2017","author_short":["Gatel, C.","Fu, X.","Serin, V.","Eddrief, M.","Etgens, V.","Warot-Fonrose, B."],"bibdata":{"bibtype":"article","type":"article","title":"In Depth Spatially Inhomogeneous Phase Transition in Epitaxial MnAs Film on GaAs(001)","volume":"17","issn":"1530-6984","url":"http://dx.doi.org/10.1021/acs.nanolett.7b00144","doi":"10.1021/acs.nanolett.7b00144","abstract":"Most studies on MnAs material in its bulk form have been focused on its temperature-dependent structural phase transition accompanied by a magnetic one. Magnetostructural phase transition parameters in thin MnAs films grown on substrates present however some differences from the bulk behavior, and local studies become mandatory for a deeper understanding of the mechanisms involved within the transition. Up to now, only surface techniques have been carried out, while the transition is a three-dimensional phenomenon. We therefore developed an original nanometer scale methodology using electron holography to investigate the phase transition in an epitaxial MnAs thin film on GaAs(001) from the cross-section view. Using quantitative magnetic maps recorded at the nanometer scale as a function of the temperature, our work provides a direct in situ observation of the inhomogeneous spatial distribution of the transition in the layer depth and brings new insights on the fundamental transition mechanisms.","number":"4","urldate":"2017-10-02","journal":"Nano Letters","author":[{"propositions":[],"lastnames":["Gatel"],"firstnames":["C."],"suffixes":[]},{"propositions":[],"lastnames":["Fu"],"firstnames":["X."],"suffixes":[]},{"propositions":[],"lastnames":["Serin"],"firstnames":["V."],"suffixes":[]},{"propositions":[],"lastnames":["Eddrief"],"firstnames":["M."],"suffixes":[]},{"propositions":[],"lastnames":["Etgens"],"firstnames":["V."],"suffixes":[]},{"propositions":[],"lastnames":["Warot-Fonrose"],"firstnames":["B."],"suffixes":[]}],"month":"April","year":"2017","pages":"2460–2466","bibtex":"@article{gatel_depth_2017,\n\ttitle = {In {Depth} {Spatially} {Inhomogeneous} {Phase} {Transition} in {Epitaxial} {MnAs} {Film} on {GaAs}(001)},\n\tvolume = {17},\n\tissn = {1530-6984},\n\turl = {http://dx.doi.org/10.1021/acs.nanolett.7b00144},\n\tdoi = {10.1021/acs.nanolett.7b00144},\n\tabstract = {Most studies on MnAs material in its bulk form have been focused on its temperature-dependent structural phase transition accompanied by a magnetic one. Magnetostructural phase transition parameters in thin MnAs films grown on substrates present however some differences from the bulk behavior, and local studies become mandatory for a deeper understanding of the mechanisms involved within the transition. Up to now, only surface techniques have been carried out, while the transition is a three-dimensional phenomenon. We therefore developed an original nanometer scale methodology using electron holography to investigate the phase transition in an epitaxial MnAs thin film on GaAs(001) from the cross-section view. Using quantitative magnetic maps recorded at the nanometer scale as a function of the temperature, our work provides a direct in situ observation of the inhomogeneous spatial distribution of the transition in the layer depth and brings new insights on the fundamental transition mechanisms.},\n\tnumber = {4},\n\turldate = {2017-10-02},\n\tjournal = {Nano Letters},\n\tauthor = {Gatel, C. and Fu, X. and Serin, V. and Eddrief, M. and Etgens, V. and Warot-Fonrose, B.},\n\tmonth = apr,\n\tyear = {2017},\n\tpages = {2460--2466},\n}\n\n","author_short":["Gatel, C.","Fu, X.","Serin, V.","Eddrief, M.","Etgens, V.","Warot-Fonrose, B."],"key":"gatel_depth_2017-1","id":"gatel_depth_2017-1","bibbaseid":"gatel-fu-serin-eddrief-etgens-warotfonrose-indepthspatiallyinhomogeneousphasetransitioninepitaxialmnasfilmongaas001-2017","role":"author","urls":{"Paper":"http://dx.doi.org/10.1021/acs.nanolett.7b00144"},"metadata":{"authorlinks":{}},"html":""},"bibtype":"article","biburl":"https://bibbase.org/zotero/spintextures","dataSources":["rXHvWQJHcL8ctHS4s"],"keywords":[],"search_terms":["depth","spatially","inhomogeneous","phase","transition","epitaxial","mnas","film","gaas","001","gatel","fu","serin","eddrief","etgens","warot-fonrose"],"title":"In Depth Spatially Inhomogeneous Phase Transition in Epitaxial MnAs Film on GaAs(001)","year":2017}