@article{ ISI:000333859300005,
Author = {Giencke, Jon E. and Folkman, Chad M. and Baek, Seung-Hyub and Eom,
   Chang-Beom},
Title = {{Tailoring the domain structure of epitaxial BiFeO3 thin films}},
Journal = {{CURRENT OPINION IN SOLID STATE \& MATERIALS SCIENCE}},
Year = {{2014}},
Volume = {{18}},
Number = {{1, SI}},
Pages = {{39-45}},
Month = {{FEB}},
Abstract = {{Control of the ferroelastic and ferroelectric domain structure of BiFeO3
   through the use of epitaxial growth on substrates with reduced symmetry
   is reviewed. The first approach presented utilizes orthoscandate
   substrates, specifically TbScO3, to reduce the number of possible
   ferroelastic domains from 4 to 2. Experimental results and phase field
   simulations are presented which are in agreement with the theory of
   anisotropic strain relaxation, due to differing in-plane lattice
   parameters of the orthorhombic substrate, causing a reduction in the
   possible domains. The second approach that is presented involves the use
   of miscut cubic substrates, such as SrTiO3, to tailor the domain
   structure from 4-domain to 2- or single-domain is presented, the former
   being achieved with a miscut in the {[}100] direction and the latter
   with a miscut in the {[}110] direction, assuming a film normal
   orientation of {[}001]. The use of these techniques in understanding the
   fundamental nature of the ferroelastic and ferroelectric properties in
   BiFeO3, and the use of these methods in tailoring BiFeO3 to meet the
   needs of future device applications is discussed. (C) 2013 Elsevier Ltd.
   All rights reserved.}},
DOI = {{10.1016/j.cossms.2013.11.003}},
ISSN = {{1359-0286}},
EISSN = {{1879-0348}},
ResearcherID-Numbers = {{Eom, Chang-Beom/I-5567-2014
   Baek, Seung-Hyub/B-9189-2013
   }},
ORCID-Numbers = {{Baek, Seung-Hyub/0000-0002-3187-6596}},
Unique-ID = {{ISI:000333859300005}},
}

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