Metastability Phenomena in VO2 Thin Films

Metastability Phenomena in VO2 Thin Films. Gioacchino, D., Marcelli, A., Puri, A., Zou, C., Fan, L., Zeitler, U., & Bianconi, A. Condensed Matter, 2(1):10+, February, 2017.

Paper doi abstract bibtex

VO2 is a transition metal oxide in which complex electronic phases appear near the metal-to-insulator transition due to electron correlation and electron–lattice interactions. This system is characterized by a metal-to-insulator transition (MIT) at around 341 K. The metal (high T) phase is tetragonal while the insulator (low T) phase is monoclinic and the resistivity changes at the MIT by about five orders of magnitude. Here, we report investigations of the MIT in a thin VO2 film deposited on a sapphire substrate showing hysteresis. The MIT has been characterized by resistance measurements versus temperature and a DC magnetic field. The thin sample shows different final resistance values in both the insulating and metallic state after different temperature cycles. Moreover, some cycles do not close in the insulating phase. An unexpected magnetic dependence of the temperature cycle in the sample was also observed. The results show that the MIT of VO2 can be controlled by reducing the thickness below 40 nm in micron-sized ribbons since MIT is associated with the emergence of coexisting metastable conformations controlled by the thickness-dependent misfit strain and stress distributions induced by the mismatch between thin ribbon film and the substrate.

@article{gioacchino_metastability_2017,
	title = {Metastability {Phenomena} in {VO}2 {Thin} {Films}},
	volume = {2},
	url = {http://dx.doi.org/10.3390/condmat2010010},
	doi = {10.3390/condmat2010010},
	abstract = {VO2 is a transition metal oxide in which complex electronic phases appear near the metal-to-insulator transition due to electron correlation and electron–lattice interactions. This system is characterized by a metal-to-insulator transition (MIT) at around 341 K. The metal (high T) phase is tetragonal while the insulator (low T) phase is monoclinic and the resistivity changes at the MIT by about five orders of magnitude. Here, we report investigations of the MIT in a thin VO2 film deposited on a sapphire substrate showing hysteresis. The MIT has been characterized by resistance measurements versus temperature and a DC magnetic field. The thin sample shows different final resistance values in both the insulating and metallic state after different temperature cycles. Moreover, some cycles do not close in the insulating phase. An unexpected magnetic dependence of the temperature cycle in the sample was also observed. The results show that the MIT of VO2 can be controlled by reducing the thickness below 40 nm in micron-sized ribbons since MIT is associated with the emergence of coexisting metastable conformations controlled by the thickness-dependent misfit strain and stress distributions induced by the mismatch between thin ribbon film and the substrate.},
	number = {1},
	journal = {Condensed Matter},
	author = {Gioacchino, Daniele and Marcelli, Augusto and Puri, Alessandro and Zou, Chongwen and Fan, Lele and Zeitler, Uli and Bianconi, Antonio},
	month = feb,
	year = {2017},
	pages = {10+}
}

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{"_id":"b3vPz6otYbjjc7oZ9","bibbaseid":"gioacchino-marcelli-puri-zou-fan-zeitler-bianconi-metastabilityphenomenainvo2thinfilms-2017","downloads":0,"creationDate":"2019-03-06T18:12:59.056Z","title":"Metastability Phenomena in VO2 Thin Films","author_short":["Gioacchino, D.","Marcelli, A.","Puri, A.","Zou, C.","Fan, L.","Zeitler, U.","Bianconi, A."],"year":2017,"bibtype":"article","biburl":"https://bibbase.org/zotero/abiancon","bibdata":{"bibtype":"article","type":"article","title":"Metastability Phenomena in VO2 Thin Films","volume":"2","url":"http://dx.doi.org/10.3390/condmat2010010","doi":"10.3390/condmat2010010","abstract":"VO2 is a transition metal oxide in which complex electronic phases appear near the metal-to-insulator transition due to electron correlation and electron–lattice interactions. This system is characterized by a metal-to-insulator transition (MIT) at around 341 K. The metal (high T) phase is tetragonal while the insulator (low T) phase is monoclinic and the resistivity changes at the MIT by about five orders of magnitude. Here, we report investigations of the MIT in a thin VO2 film deposited on a sapphire substrate showing hysteresis. The MIT has been characterized by resistance measurements versus temperature and a DC magnetic field. The thin sample shows different final resistance values in both the insulating and metallic state after different temperature cycles. Moreover, some cycles do not close in the insulating phase. An unexpected magnetic dependence of the temperature cycle in the sample was also observed. The results show that the MIT of VO2 can be controlled by reducing the thickness below 40 nm in micron-sized ribbons since MIT is associated with the emergence of coexisting metastable conformations controlled by the thickness-dependent misfit strain and stress distributions induced by the mismatch between thin ribbon film and the substrate.","number":"1","journal":"Condensed Matter","author":[{"propositions":[],"lastnames":["Gioacchino"],"firstnames":["Daniele"],"suffixes":[]},{"propositions":[],"lastnames":["Marcelli"],"firstnames":["Augusto"],"suffixes":[]},{"propositions":[],"lastnames":["Puri"],"firstnames":["Alessandro"],"suffixes":[]},{"propositions":[],"lastnames":["Zou"],"firstnames":["Chongwen"],"suffixes":[]},{"propositions":[],"lastnames":["Fan"],"firstnames":["Lele"],"suffixes":[]},{"propositions":[],"lastnames":["Zeitler"],"firstnames":["Uli"],"suffixes":[]},{"propositions":[],"lastnames":["Bianconi"],"firstnames":["Antonio"],"suffixes":[]}],"month":"February","year":"2017","pages":"10+","bibtex":"@article{gioacchino_metastability_2017,\n\ttitle = {Metastability {Phenomena} in {VO}2 {Thin} {Films}},\n\tvolume = {2},\n\turl = {http://dx.doi.org/10.3390/condmat2010010},\n\tdoi = {10.3390/condmat2010010},\n\tabstract = {VO2 is a transition metal oxide in which complex electronic phases appear near the metal-to-insulator transition due to electron correlation and electron–lattice interactions. This system is characterized by a metal-to-insulator transition (MIT) at around 341 K. The metal (high T) phase is tetragonal while the insulator (low T) phase is monoclinic and the resistivity changes at the MIT by about five orders of magnitude. Here, we report investigations of the MIT in a thin VO2 film deposited on a sapphire substrate showing hysteresis. The MIT has been characterized by resistance measurements versus temperature and a DC magnetic field. The thin sample shows different final resistance values in both the insulating and metallic state after different temperature cycles. Moreover, some cycles do not close in the insulating phase. An unexpected magnetic dependence of the temperature cycle in the sample was also observed. The results show that the MIT of VO2 can be controlled by reducing the thickness below 40 nm in micron-sized ribbons since MIT is associated with the emergence of coexisting metastable conformations controlled by the thickness-dependent misfit strain and stress distributions induced by the mismatch between thin ribbon film and the substrate.},\n\tnumber = {1},\n\tjournal = {Condensed Matter},\n\tauthor = {Gioacchino, Daniele and Marcelli, Augusto and Puri, Alessandro and Zou, Chongwen and Fan, Lele and Zeitler, Uli and Bianconi, Antonio},\n\tmonth = feb,\n\tyear = {2017},\n\tpages = {10+}\n}\n\n","author_short":["Gioacchino, D.","Marcelli, A.","Puri, A.","Zou, C.","Fan, L.","Zeitler, U.","Bianconi, A."],"key":"gioacchino_metastability_2017","id":"gioacchino_metastability_2017","bibbaseid":"gioacchino-marcelli-puri-zou-fan-zeitler-bianconi-metastabilityphenomenainvo2thinfilms-2017","role":"author","urls":{"Paper":"http://dx.doi.org/10.3390/condmat2010010"},"downloads":0},"search_terms":["metastability","phenomena","vo2","thin","films","gioacchino","marcelli","puri","zou","fan","zeitler","bianconi"],"keywords":[],"authorIDs":[],"dataSources":["qfSWh53k794ZuPrG9"]}