Molecular beam epitaxy of InN nanorods on Si- and C-faces of SiC substrates. Goff, L., Powell, R., Kent, A., Foxon, C., Novikov, S., Webster, R., & Cherns, D. Journal of Crystal Growth, 386:135 – 138, 2014. Paper doi bibtex @ARTICLE{Goff2014135,
author = {Goff, L.E. and Powell, R.E.L. and Kent, A.J. and Foxon, C.T. and Novikov, S.V. and Webster, R. and Cherns, D.},
title = {Molecular beam epitaxy of InN nanorods on Si- and C-faces of SiC substrates},
year = {2014},
journal = {Journal of Crystal Growth},
volume = {386},
pages = {135 – 138},
doi = {10.1016/j.jcrysgro.2013.09.049},
url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84887040403&doi=10.1016%2fj.jcrysgro.2013.09.049&partnerID=40&md5=7cc9c2f4497b0e8997de0d9bad8e7468},
type = {Article},
source = {Scopus}
}
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