Detecting single-electron events in TEM using low-cost electronics and a silicon strip sensor. Gontard, L. b, Moldovan, G., Carmona-Galán, R., Lin, C., & Kirkland, A. Microscopy, 63(2):119-130, 2014. cited By 3![Detecting single-electron events in TEM using low-cost electronics and a silicon strip sensor [link]](https://bibbase.org/img/filetypes/link.svg "link")
Paper doi abstract bibtex There is great interest in developing novel position-sensitive direct detectors for transmission electron microscopy (TEM) that do not rely in the conversion of electrons into photons. Direct imaging improves contrast and efficiency and allows the operation of the microscope at lower energies and at lower doses without loss in resolution, which is especially important for studying soft materials and biological samples. We investigate the feasibility of employing a silicon strip detector as an imaging detector for TEM. This device, routinely used in high-energy particle physics, can detect small variations in electric current associated with the impact of a single charged particle. The main advantages of using this type of sensor for direct imaging in TEM are its intrinsic radiation hardness and large detection area. Here, we detail design, simulation, fabrication and tests in a TEM of the front-end electronics developed using low-cost discrete components and discuss the limitations and applications of this technology for TEM. © The Author 2014. Published by Oxford University Press on behalf of The Japanese Society of Microscopy. All rights reserved.
@ARTICLE{Gontard2014119,
author={Gontard, L.C.a b and Moldovan, G.a and Carmona-Galán, R.c and Lin, C.a and Kirkland, A.I.a },
title={Detecting single-electron events in TEM using low-cost electronics and a silicon strip sensor},
journal={Microscopy},
year={2014},
volume={63},
number={2},
pages={119-130},
doi={10.1093/jmicro/dft051},
note={cited By 3},
url={https://www.scopus.com/inward/record.url?eid=2-s2.0-84903730483&partnerID=40&md5=6b4db9df6ffdc6cecdb6bd462b5d4dc7},
affiliation={Department of Materials, University of Oxford, 16 Parks Road, Oxford, United Kingdom; Instituto de Ciencia de Materiales de Sevilla (ICMSE-CSIC), Avda. Américo Vespucio 49, Sevilla, Spain; Instituto de Microelecrónica de Sevilla (IMSE-CNM), CSIC-Universidad de Sevilla, Avda. Américo Vespucio s/n, Sevilla, Spain},
abstract={There is great interest in developing novel position-sensitive direct detectors for transmission electron microscopy (TEM) that do not rely in the conversion of electrons into photons. Direct imaging improves contrast and efficiency and allows the operation of the microscope at lower energies and at lower doses without loss in resolution, which is especially important for studying soft materials and biological samples. We investigate the feasibility of employing a silicon strip detector as an imaging detector for TEM. This device, routinely used in high-energy particle physics, can detect small variations in electric current associated with the impact of a single charged particle. The main advantages of using this type of sensor for direct imaging in TEM are its intrinsic radiation hardness and large detection area. Here, we detail design, simulation, fabrication and tests in a TEM of the front-end electronics developed using low-cost discrete components and discuss the limitations and applications of this technology for TEM. © The Author 2014. Published by Oxford University Press on behalf of The Japanese Society of Microscopy. All rights reserved.},
author_keywords={Charge sensitive amplifier; Direct electron detectors; Electron microscopy; Front-end electronics; Silicon strip detectors; TEM},
document_type={Article},
source={Scopus},
}
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