Selective growth of tensily strained Si1− yCy films on patterned Si substrates. Gouyé, A., Hüe, F., Halimaoui, A., Kermarrec, O., Campidelli, Y., Hÿtch, M. J., Houdellier, F., Claverie, A., & Bensahel, D. Materials Science in Semiconductor Processing, 12(1-2):34–39, 2009. bibtex @article{gouye_selective_2009,
title = {Selective growth of tensily strained {Si1}− {yCy} films on patterned {Si} substrates},
volume = {12},
number = {1-2},
journal = {Materials Science in Semiconductor Processing},
author = {Gouyé, A. and Hüe, Florian and Halimaoui, A. and Kermarrec, O. and Campidelli, Y. and Hÿtch, M. J. and Houdellier, Florent and Claverie, Alain and Bensahel, D.},
year = {2009},
pages = {34--39},
}
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