@inproceedings{goyal_surface_2013,
	title = {Surface barrier height for different {Al} compositions and barrier layer thicknesses in {AlGaN}/{GaN} heterostructure field effect transistors},
	volume = {1566},
	isbn = {978-0-7354-1194-4},
	doi = {10.1063/1.4848451},
	abstract = {In this paper, we present a physics based analytical model for the calculation of surface barrier height for given values of barrier layer thicknesses and Al mole fractions. An explicit expression for the two dimensional electron gas density is also developed incorporating the change in polarization charges for different Al mole fractions. © 2013 AIP Publishing LLC.},
	booktitle = {{AIP} {Conference} {Proceedings}},
	publisher = {American Institute of Physics Inc.},
	author = {Goyal, Nitin and Iniguez, Benjamin and Fjeldly, Tor A.},
	year = {2013},
	note = {ISSN: 15517616},
	keywords = {Al mole fraction, AlGaN/GaN, Surface barrier height, Surface donor states},
	pages = {393--394},
}

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