@inproceedings{conf/irps/GrasserFWRBWVWABGP24,
  added-at = {2024-05-29T00:00:00.000+0200},
  author = {Grasser, Tibor and Feil, Maximilian W. and Waschneck, Katja and Reisinger, Hans and Berens, Judith and Waldhör, Dominic and Vasilev, A. and Waltl, Michael and Aichinger, Thomas and Bockstedte, M. and Gustin, Wolfgang and Pobegen, Gregor},
  biburl = {https://www.bibsonomy.org/bibtex/22cd1319bba1fa436ef56b2aceb6d0d8f/dblp},
  booktitle = {IRPS},
  crossref = {conf/irps/2024},
  ee = {https://doi.org/10.1109/IRPS48228.2024.10529465},
  interhash = {227e5d512ff4e6fdf5bb1ac21312bf97},
  intrahash = {2cd1319bba1fa436ef56b2aceb6d0d8f},
  isbn = {979-8-3503-6976-2},
  keywords = {dblp},
  pages = 3,
  publisher = {IEEE},
  timestamp = {2024-06-03T07:16:33.000+0200},
  title = {A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs.},
  url = {http://dblp.uni-trier.de/db/conf/irps/irps2024.html#GrasserFWRBWVWABGP24},
  year = 2024
}

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