@Article{         Grasser_2000aa,
  abstract      = {In mixed-mode device simulation the solution of the basic transport equations for the semiconductor devices is directly embedded into the solution procedure for the circuit equations. Compact modeling is thus avoided and much higher accuracy is obtained. We review the state-of-the-art in mixed-mode device simulation. In addition we present recent achievements, in particular, techniques for convergence acceleration and methods for dealing with electro-thermal problems. Much emphasis is put on the examples section to demonstrate the value and usefulness of the proposed techniques.},
  author        = {Grasser, Klaus-Tibor and Selberherr, Siegfried},
  doi           = {10.1016/S0026-2692(00)00083-5},
  file          = {Grasser_2000aa.pdf},
  issn          = {0026-2692},
  journal       = {Microelectronics Journal},
  keywords      = {field-circuit,semiconductor,coupling},
  langid        = {english},
  number        = {11},
  pages         = {873--881},
  title         = {Mixed-mode device simulation},
  volume        = {31},
  year          = {2000},
  shortjournal  = {Microelectron. J.}
}

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