Insulating state of ultrathin epitaxial LaNiO$_3$ thin films detected by hard x-ray photoemission. Gray, A X, Janotti, A, Son, J, LeBeau, J M, Ueda, S, Yamashita, Y, Kobayashi, K, Kaiser, A M, Sutarto, R, Wadati, H, Sawatzky, G A, Van de Walle, C G, Stemmer, S, & Fadley, C S Phys. Rev. B: Condens. Matter Mater. Phys., August, 2011. doi abstract bibtex In order to understand the influence of strain and film thickness on the electronic structure of thin films of strongly correlated oxides, we have applied hard x-ray photoemission (HXPS) at 6 keV, soft x-ray photoemission (XPS) at 1.5 keV, and transmission electron microscopy to epitaxial LaNiO3 films deposited on two substrates: LaAlO3 (compressive strain) and (LaAlO3)(0.3)(Sr2AlTaO6)(0.7) (tensile strain). Using inelastic attenuation lengths in LaNiO3 determined from the HXPS data, we have decomposed valence-band spectra into layer-specific contributions. This decomposition is validated by comparing with the results of first-principles calculations using a hybrid functional. The resultant thin-film LaNiO3 densities of states exhibit significant differences in spectral weights for the thinnest LaNiO3 films. A gap opening consistent with a metal-to-insulator transition is observed for the thinnest 2.7 nm LaNiO3 film on an (LaAlO3)(0.3)(Sr2AlTaO6)(0.7) substrate, with a similar gap opening also being observed in complementary soft x-ray photoemission at 1.5 keV for a thinner 1.4 nm film on an LaAlO3 substrate. A metal-to-insulator transition in very thin nm-scale films of LaNiO3 is thus suggested as a general phenomenon.
@ARTICLE{Gray2011-xl,
title = "Insulating state of ultrathin epitaxial {LaNiO$_3$} thin films
detected by hard x-ray photoemission",
author = "Gray, A X and Janotti, A and Son, J and LeBeau, J M and Ueda, S
and Yamashita, Y and Kobayashi, K and Kaiser, A M and Sutarto, R
and Wadati, H and Sawatzky, G A and Van de Walle, C G and
Stemmer, S and Fadley, C S",
abstract = "In order to understand the influence of strain and film thickness
on the electronic structure of thin films of strongly correlated
oxides, we have applied hard x-ray photoemission (HXPS) at 6 keV,
soft x-ray photoemission (XPS) at 1.5 keV, and transmission
electron microscopy to epitaxial LaNiO3 films deposited on two
substrates: LaAlO3 (compressive strain) and
(LaAlO3)(0.3)(Sr2AlTaO6)(0.7) (tensile strain). Using inelastic
attenuation lengths in LaNiO3 determined from the HXPS data, we
have decomposed valence-band spectra into layer-specific
contributions. This decomposition is validated by comparing with
the results of first-principles calculations using a hybrid
functional. The resultant thin-film LaNiO3 densities of states
exhibit significant differences in spectral weights for the
thinnest LaNiO3 films. A gap opening consistent with a
metal-to-insulator transition is observed for the thinnest 2.7 nm
LaNiO3 film on an (LaAlO3)(0.3)(Sr2AlTaO6)(0.7) substrate, with a
similar gap opening also being observed in complementary soft
x-ray photoemission at 1.5 keV for a thinner 1.4 nm film on an
LaAlO3 substrate. A metal-to-insulator transition in very thin
nm-scale films of LaNiO3 is thus suggested as a general
phenomenon.",
journal = "Phys. Rev. B: Condens. Matter Mater. Phys.",
volume = 84,
number = 7,
month = aug,
year = 2011,
keywords = "electron-spectroscopy;parameters;photoelectron
angular-distribution;LeBeau",
language = "English",
issn = "1098-0121",
doi = "10.1103/PhysRevB.84.075104"
}
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Using inelastic attenuation lengths in LaNiO3 determined from the HXPS data, we have decomposed valence-band spectra into layer-specific contributions. This decomposition is validated by comparing with the results of first-principles calculations using a hybrid functional. The resultant thin-film LaNiO3 densities of states exhibit significant differences in spectral weights for the thinnest LaNiO3 films. A gap opening consistent with a metal-to-insulator transition is observed for the thinnest 2.7 nm LaNiO3 film on an (LaAlO3)(0.3)(Sr2AlTaO6)(0.7) substrate, with a similar gap opening also being observed in complementary soft x-ray photoemission at 1.5 keV for a thinner 1.4 nm film on an LaAlO3 substrate. A metal-to-insulator transition in very thin nm-scale films of LaNiO3 is thus suggested as a general phenomenon.","journal":"Phys. Rev. B: Condens. Matter Mater. 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Using inelastic\n attenuation lengths in LaNiO3 determined from the HXPS data, we\n have decomposed valence-band spectra into layer-specific\n contributions. This decomposition is validated by comparing with\n the results of first-principles calculations using a hybrid\n functional. The resultant thin-film LaNiO3 densities of states\n exhibit significant differences in spectral weights for the\n thinnest LaNiO3 films. A gap opening consistent with a\n metal-to-insulator transition is observed for the thinnest 2.7 nm\n LaNiO3 film on an (LaAlO3)(0.3)(Sr2AlTaO6)(0.7) substrate, with a\n similar gap opening also being observed in complementary soft\n x-ray photoemission at 1.5 keV for a thinner 1.4 nm film on an\n LaAlO3 substrate. A metal-to-insulator transition in very thin\n nm-scale films of LaNiO3 is thus suggested as a general\n phenomenon.\",\n journal = \"Phys. Rev. B: Condens. Matter Mater. 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