@article{ ISI:000270670500028,
Author = {Gruverman, A. and Wu, D. and Lu, H. and Wang, Y. and Jang, H. W. and
   Folkman, C. M. and Zhuravlev, M. Ye. and Felker, D. and Rzchowski, M.
   and Eom, C. -B. and Tsymbal, E. Y.},
Title = {{Tunneling Electroresistance Effect in Ferroelectric Tunnel Junctions at
   the Nanoscale}},
Journal = {{NANO LETTERS}},
Year = {{2009}},
Volume = {{9}},
Number = {{10}},
Pages = {{3539-3543}},
Month = {{OCT}},
Abstract = {{Using a set of scanning probe microscopy techniques, we demonstrate the
   reproducible tunneling electroresistance effect on nanometer-tick
   epitaxial BaTiO(3) single-crystalline thin films on SrRuO(3) bottom
   electrodes. Correlation between ferroelectric and electronic transport
   properties is established by direct nanoscale visualization and control
   of polarization and tunneling current. The obtained results show a
   change in resistance by about 2 orders of magnitude upon polarization
   reversal on a lateral scale of 20 nm at room temperature. These results
   are promising for employing ferroelectric tunnel Junctions In
   nonvolatile memory and logic devices.}},
DOI = {{10.1021/nl901754t}},
ISSN = {{1530-6984}},
ResearcherID-Numbers = {{Wu, Dong/H-4987-2014
   Eom, Chang-Beom/I-5567-2014
   Jang, Ho Won/D-9866-2011
   Tsymbal, Evgeny/G-3493-2013
   Zhuravlev, Mikhail/J-7995-2013
   Gruverman, Alexei/P-3537-2014
   Wang, Yong/F-7019-2010}},
ORCID-Numbers = {{Jang, Ho Won/0000-0002-6952-7359
   Tsymbal, Evgeny/0000-0002-6728-5480
   Zhuravlev, Mikhail/0000-0003-4982-5487
   Gruverman, Alexei/0000-0003-0492-2750
   Wang, Yong/0000-0002-0248-9757}},
Unique-ID = {{ISI:000270670500028}},
}

{"_id":"eAPXi5eK5BoJqqjEH","bibbaseid":"gruverman-wu-lu-wang-jang-folkman-zhuravlev-felker-etal-tunnelingelectroresistanceeffectinferroelectrictunneljunctionsatthenanoscale-2009","downloads":0,"creationDate":"2018-09-17T23:43:09.749Z","title":"Tunneling Electroresistance Effect in Ferroelectric Tunnel Junctions at the Nanoscale","author_short":["Gruverman, A.","Wu, D.","Lu, H.","Wang, Y.","Jang, H. W.","Folkman, C. M.","Zhuravlev, M. Y.","Felker, D.","Rzchowski, M.","Eom, C. -.","Tsymbal, E. Y."],"year":2009,"bibtype":"article","biburl":"http://oxide.engr.wisc.edu/newWebsite/papers/oxide.bib","bibdata":{"bibtype":"article","type":"article","author":[{"propositions":[],"lastnames":["Gruverman"],"firstnames":["A."],"suffixes":[]},{"propositions":[],"lastnames":["Wu"],"firstnames":["D."],"suffixes":[]},{"propositions":[],"lastnames":["Lu"],"firstnames":["H."],"suffixes":[]},{"propositions":[],"lastnames":["Wang"],"firstnames":["Y."],"suffixes":[]},{"propositions":[],"lastnames":["Jang"],"firstnames":["H.","W."],"suffixes":[]},{"propositions":[],"lastnames":["Folkman"],"firstnames":["C.","M."],"suffixes":[]},{"propositions":[],"lastnames":["Zhuravlev"],"firstnames":["M.","Ye."],"suffixes":[]},{"propositions":[],"lastnames":["Felker"],"firstnames":["D."],"suffixes":[]},{"propositions":[],"lastnames":["Rzchowski"],"firstnames":["M."],"suffixes":[]},{"propositions":[],"lastnames":["Eom"],"firstnames":["C.","-B."],"suffixes":[]},{"propositions":[],"lastnames":["Tsymbal"],"firstnames":["E.","Y."],"suffixes":[]}],"title":"Tunneling Electroresistance Effect in Ferroelectric Tunnel Junctions at the Nanoscale","journal":"NANO LETTERS","year":"2009","volume":"9","number":"10","pages":"3539-3543","month":"OCT","abstract":"Using a set of scanning probe microscopy techniques, we demonstrate the reproducible tunneling electroresistance effect on nanometer-tick epitaxial BaTiO(3) single-crystalline thin films on SrRuO(3) bottom electrodes. Correlation between ferroelectric and electronic transport properties is established by direct nanoscale visualization and control of polarization and tunneling current. The obtained results show a change in resistance by about 2 orders of magnitude upon polarization reversal on a lateral scale of 20 nm at room temperature. These results are promising for employing ferroelectric tunnel Junctions In nonvolatile memory and logic devices.","doi":"10.1021/nl901754t","issn":"1530-6984","researcherid-numbers":"Wu, Dong/H-4987-2014 Eom, Chang-Beom/I-5567-2014 Jang, Ho Won/D-9866-2011 Tsymbal, Evgeny/G-3493-2013 Zhuravlev, Mikhail/J-7995-2013 Gruverman, Alexei/P-3537-2014 Wang, Yong/F-7019-2010","orcid-numbers":"Jang, Ho Won/0000-0002-6952-7359 Tsymbal, Evgeny/0000-0002-6728-5480 Zhuravlev, Mikhail/0000-0003-4982-5487 Gruverman, Alexei/0000-0003-0492-2750 Wang, Yong/0000-0002-0248-9757","unique-id":"ISI:000270670500028","bibtex":"@article{ ISI:000270670500028,\nAuthor = {Gruverman, A. and Wu, D. and Lu, H. and Wang, Y. and Jang, H. W. and\n Folkman, C. M. and Zhuravlev, M. Ye. and Felker, D. and Rzchowski, M.\n and Eom, C. -B. and Tsymbal, E. Y.},\nTitle = {{Tunneling Electroresistance Effect in Ferroelectric Tunnel Junctions at\n the Nanoscale}},\nJournal = {{NANO LETTERS}},\nYear = {{2009}},\nVolume = {{9}},\nNumber = {{10}},\nPages = {{3539-3543}},\nMonth = {{OCT}},\nAbstract = {{Using a set of scanning probe microscopy techniques, we demonstrate the\n reproducible tunneling electroresistance effect on nanometer-tick\n epitaxial BaTiO(3) single-crystalline thin films on SrRuO(3) bottom\n electrodes. Correlation between ferroelectric and electronic transport\n properties is established by direct nanoscale visualization and control\n of polarization and tunneling current. The obtained results show a\n change in resistance by about 2 orders of magnitude upon polarization\n reversal on a lateral scale of 20 nm at room temperature. These results\n are promising for employing ferroelectric tunnel Junctions In\n nonvolatile memory and logic devices.}},\nDOI = {{10.1021/nl901754t}},\nISSN = {{1530-6984}},\nResearcherID-Numbers = {{Wu, Dong/H-4987-2014\n Eom, Chang-Beom/I-5567-2014\n Jang, Ho Won/D-9866-2011\n Tsymbal, Evgeny/G-3493-2013\n Zhuravlev, Mikhail/J-7995-2013\n Gruverman, Alexei/P-3537-2014\n Wang, Yong/F-7019-2010}},\nORCID-Numbers = {{Jang, Ho Won/0000-0002-6952-7359\n Tsymbal, Evgeny/0000-0002-6728-5480\n Zhuravlev, Mikhail/0000-0003-4982-5487\n Gruverman, Alexei/0000-0003-0492-2750\n Wang, Yong/0000-0002-0248-9757}},\nUnique-ID = {{ISI:000270670500028}},\n}\n\n","author_short":["Gruverman, A.","Wu, D.","Lu, H.","Wang, Y.","Jang, H. W.","Folkman, C. M.","Zhuravlev, M. Y.","Felker, D.","Rzchowski, M.","Eom, C. -.","Tsymbal, E. 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