Exploiting Read/Write Asymmetry to Achieve Opportunistic SRAM Voltage Switching in Dual-Supply Near-Threshold Processors. Gu, Y., Yan, D., Verma, V., Wang, P., Stan, M. R., & Zhang, X. Unknown Journal, 2018.
Exploiting Read/Write Asymmetry to Achieve Opportunistic SRAM Voltage Switching in Dual-Supply Near-Threshold Processors [link]Paper  bibtex   
@article{2653,
  author = {Yajia Gu and Dengxue Yan and Vishal Verma and Pai Wang and Mircea R. Stan and Xuan Zhang},
  title = {Exploiting Read/Write Asymmetry to Achieve Opportunistic SRAM Voltage Switching in Dual-Supply Near-Threshold Processors},
  year = {2018},
  journal = {Unknown Journal},
  url = {https://doi.org/10.20944/preprints201806.0275.v1}
}

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