A compact model for RRAM including random telegraph noise

A compact model for RRAM including random telegraph noise. Guan<sup>S</sup>, B. & Li, J. In 2016 IEEE International Reliability Physics Symposium (IRPS), pages MY-5-1–MY-5-4, April, 2016.
doi bibtex

@INPROCEEDINGS{guan2016irps, 
author={Bochen Guan<sup>S</sup> and Jing Li}, 
booktitle={2016 IEEE International Reliability Physics Symposium (IRPS)}, 
title={A compact model for {RRAM} including random telegraph noise}, 
year={2016}, 
date={2016-04},
volume={}, 
number={}, 
pages={MY-5-1--MY-5-4}, 
keywords={conference, Monte Carlo methods,current fluctuations,electromagnetic interference,integrated circuit design,integrated circuit reliability,random noise,resistive RAM,telegraphy,Monte Carlo method,RRAM circuit reliability,RRAM compact model,RTN effect,current fluctuation,random telegraph noise,tunneling gap,Current measurement,Data models,Electron traps,Fluctuations,Integrated circuit modeling,Mathematical model,Switches,Compact model,RRAM,Random Telegraph Noise}, 
doi={10.1109/IRPS.2016.7574621}, 
ISSN={}, 
month={April},}

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