Subband selective disorder in a quasi-2D system and its effect on the intersubband spectrum. Hackenberg, M., Metzner, C., Hofmann, M., & Döhler, G. Physica E: Low-dimensional Systems and Nanostructures, 7(1-2):216-219, ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS, 4, 2000. Paper Website abstract bibtex We investigate theoretically the intersubband (IS) absorption spectra of a quantum well with a sub-monolayer of barrier material inserted at the well center zc. This “perturbation layer” creates a random lateral potential modulation with different fluctuation amplitudes Δm for the ground (m=0) and first excited (m=1) subband. In the unbiased system, the 0-electrons become in-plane localized by the perturbation (Δ0>0), while the excited subband remains unaffected (Δ1=0), due to the node of its wave function at zc. In this case of selective disorder our calculated IS spectra show at low carrier density a broad peak, reflecting the -spectrum of 0-electron states, in-plane localized in the “void areas” of the perturbation layer. For higher densities, a second, sharper peak occurs at lower energies, due to occupation of extended states. By applying a longitudinal electric field, the fluctuation amplitudes Δm of the two subbands can be continuously varied, up to the point where Δ1=Δ0 (case of correlated disorder). The corresponding IS spectra gradually change to a single, very narrow line with an only weak dependence of position and width on carrier density.
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abstract = {We investigate theoretically the intersubband (IS) absorption spectra of a quantum well with a sub-monolayer of barrier material inserted at the well center zc. This “perturbation layer” creates a random lateral potential modulation with different fluctuation amplitudes Δm for the ground (m=0) and first excited (m=1) subband. In the unbiased system, the 0-electrons become in-plane localized by the perturbation (Δ0>0), while the excited subband remains unaffected (Δ1=0), due to the node of its wave function at zc. In this case of selective disorder our calculated IS spectra show at low carrier density a broad peak, reflecting the -spectrum of 0-electron states, in-plane localized in the “void areas” of the perturbation layer. For higher densities, a second, sharper peak occurs at lower energies, due to occupation of extended states. By applying a longitudinal electric field, the fluctuation amplitudes Δm of the two subbands can be continuously varied, up to the point where Δ1=Δ0 (case of correlated disorder). The corresponding IS spectra gradually change to a single, very narrow line with an only weak dependence of position and width on carrier density.},
bibtype = {article},
author = {Hackenberg, M and Metzner, C and Hofmann, M and Döhler, G.H},
journal = {Physica E: Low-dimensional Systems and Nanostructures},
number = {1-2}
}
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