Room temperature photoluminescence revival of pulsed laser deposition grown few-layer WS$_{\textrm{2}}$ thin films. Handayani, I. P., Indari, E. D., Redhyka, G. G., Lim, A., Afkauni, A. A., Marlina, R., Suprayoga, E., Timuda, G. E., Dedi, D., Raharjo, D., Fauzi, M. H., Mardiyanto, M., Arramel, A., & Suwardy, J. Physica Scripta, 100(7):075957, July, 2025.
Room temperature photoluminescence revival of pulsed laser deposition grown few-layer WS$_{\textrm{2}}$ thin films [link]Paper  doi  abstract   bibtex   
Abstract The intricate competition between seed formation and the growth-limited area in 2D transition metal dichalcogenides has long hindered their potential applications. This study investigated the morphological and photophysical characteristics of few-layer tungsten disulfide (FL-WS 2 ) thin films deposited on SiO 2 /Si substrates via pulsed laser deposition (PLD). To induce morphological changes, the number of laser pulses was varied (50, 150, and 300 shots), followed by a post-deposition annealing treatment. Atomic force microscopy (AFM) demonstrated three distinct morphological features: continuous films, particulates, and islands, indicative of a growth evolution consistent with the Stranski–Krastanov (layer-plus-island) mechanism. X-ray photoelectron spectroscopy (XPS) revealed the presence of a semiconducting phase of 2H-WS 2 and sulphur-deficient species (WS x ) in the films. While Raman modes characteristic of WS 2 were observed, the absence of photoluminescence (PL) emission suggested the presence of defect states in the as-grown thin films. Upon post-annealing treatment, we observed a reduction in WS x species (150 and 300 laser shots) accompanied by a reduction of particulate density. This, in turn, triggers a defect state suppression, by which the PL spectra of all samples emerge, unveiling the near-resonance emission and excitonic features. This observation was confirmed by the density functional theory (DFT) simulation, pointing to the presence of an extra energy level around the K point of the Brillouin zone at high concentration of sulphur vacancy, which corresponds to the splitting of near-resonant PL emission. In addition, two pronounced Raman modes at 264 cm −1 and 334 cm −1 are associated with structural relaxation due to post-annealing. This relationship between morphological characteristics and emissive behaviour of large-area FL-WS 2 thin films provides valuable insights into their photophysical modulation, paving the way for advanced photonic applications.
@article{handayaniRoomTemperaturePhotoluminescence2025,
	title = {Room temperature photoluminescence revival of pulsed laser deposition grown few-layer {WS}$_{\textrm{2}}$ thin films},
	volume = {100},
	issn = {0031-8949, 1402-4896},
	url = {https://iopscience.iop.org/article/10.1088/1402-4896/adddfa},
	doi = {10.1088/1402-4896/adddfa},
	abstract = {Abstract
            
              The intricate competition between seed formation and the growth-limited area in 2D transition metal dichalcogenides has long hindered their potential applications. This study investigated the morphological and photophysical characteristics of few-layer tungsten disulfide (FL-WS
              2
              ) thin films deposited on SiO
              2
              /Si substrates via pulsed laser deposition (PLD). To induce morphological changes, the number of laser pulses was varied (50, 150, and 300 shots), followed by a post-deposition annealing treatment. Atomic force microscopy (AFM) demonstrated three distinct morphological features: continuous films, particulates, and islands, indicative of a growth evolution consistent with the Stranski–Krastanov (layer-plus-island) mechanism. X-ray photoelectron spectroscopy (XPS) revealed the presence of a semiconducting phase of 2H-WS
              2
              and sulphur-deficient species (WS
              x
              ) in the films. While Raman modes characteristic of WS
              2
              were observed, the absence of photoluminescence (PL) emission suggested the presence of defect states in the as-grown thin films. Upon post-annealing treatment, we observed a reduction in WS
              x
              species (150 and 300 laser shots) accompanied by a reduction of particulate density. This, in turn, triggers a defect state suppression, by which the PL spectra of all samples emerge, unveiling the near-resonance emission and excitonic features. This observation was confirmed by the density functional theory (DFT) simulation, pointing to the presence of an extra energy level around the
              K
              point of the Brillouin zone at high concentration of sulphur vacancy, which corresponds to the splitting of near-resonant PL emission. In addition, two pronounced Raman modes at 264 cm
              −1
              and 334 cm
              −1
              are associated with structural relaxation due to post-annealing. This relationship between morphological characteristics and emissive behaviour of large-area FL-WS
              2
              thin films provides valuable insights into their photophysical modulation, paving the way for advanced photonic applications.},
	number = {7},
	urldate = {2026-06-22},
	journal = {Physica Scripta},
	author = {Handayani, Ismudiati Puri and Indari, Efi Dwi and Redhyka, Grace Gita and Lim, Alice and Afkauni, Afif Akmal and Marlina, Resti and Suprayoga, Edi and Timuda, Gerald Ensang and Dedi, Dedi and Raharjo, Dennytan and Fauzi, Mohammad Hamzah and Mardiyanto, Mardiyanto and Arramel, Arramel and Suwardy, Joko},
	month = jul,
	year = {2025},
	pages = {075957},
}
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