A Monolithic, 500 C Operational Amplifier in 4H-SiC Bipolar Technology. Hedayati, R., Lanni, L., Rodriguez, S., Malm, B., G., Rusu, A., & Zetterling, C. Electron Device Lett., 35(7):693-695, 2014.
bibtex   
@article{
 title = {A Monolithic, 500 C Operational Amplifier in 4H-SiC Bipolar Technology},
 type = {article},
 year = {2014},
 pages = {693-695},
 volume = {35},
 id = {6999535b-0235-355c-889e-022703040992},
 created = {2018-11-02T20:28:08.489Z},
 file_attached = {false},
 profile_id = {99d7e05e-a704-3549-ada2-dfc74a2d55ec},
 group_id = {12f05641-c77a-31e5-8cbb-fca8e3a2be03},
 last_modified = {2018-11-02T20:28:08.489Z},
 read = {false},
 starred = {false},
 authored = {false},
 confirmed = {true},
 hidden = {false},
 citation_key = {Hedayati2014},
 private_publication = {false},
 bibtype = {article},
 author = {Hedayati, Raheleh and Lanni, Luigia and Rodriguez, Saul and Malm, B. Gunnar and Rusu, Ana and Zetterling, Carl-Mikael},
 journal = {Electron Device Lett.},
 number = {7}
}

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