@article{
 title = {A digitally controlled CMOS RF power amplifier},
 type = {article},
 year = {2001},
 identifiers = {[object Object]},
 volume = {2},
 id = {1023ab42-d7b7-3c8f-9fac-cff6e37820ca},
 created = {2017-12-04T05:34:48.054Z},
 file_attached = {false},
 profile_id = {99d7e05e-a704-3549-ada2-dfc74a2d55ec},
 last_modified = {2017-12-04T05:34:48.054Z},
 read = {false},
 starred = {false},
 authored = {true},
 confirmed = {false},
 hidden = {false},
 private_publication = {false},
 abstract = {This paper presents the design, and implementation of an RF power amplifier in a standard 0.35 μm CMOS technology. The amplifier is capable of delivering 16.5dBm of output power at 1.85GHz using a 3.3V supply with an overall measured power added efficiency (PAE) of 30%. The power amplifier employs a class AB output stage, which represents a compromise between efficiency and linearity. Measurement results of the fabricated chip are included.},
 bibtype = {article},
 author = {Hella, M.M. and Ismail, M.},
 journal = {Midwest Symposium on Circuits and Systems}
}

{"_id":"mXiy3Pmtxy8EXcCCw","bibbaseid":"hella-ismail-adigitallycontrolledcmosrfpoweramplifier-2001","downloads":0,"creationDate":"2018-11-02T20:16:34.406Z","title":"A digitally controlled CMOS RF power amplifier","author_short":["Hella, M.","Ismail, M."],"year":2001,"bibtype":"article","biburl":null,"bibdata":{"title":"A digitally controlled CMOS RF power amplifier","type":"article","year":"2001","identifiers":"[object Object]","volume":"2","id":"1023ab42-d7b7-3c8f-9fac-cff6e37820ca","created":"2017-12-04T05:34:48.054Z","file_attached":false,"profile_id":"99d7e05e-a704-3549-ada2-dfc74a2d55ec","last_modified":"2017-12-04T05:34:48.054Z","read":false,"starred":false,"authored":"true","confirmed":false,"hidden":false,"private_publication":false,"abstract":"This paper presents the design, and implementation of an RF power amplifier in a standard 0.35 μm CMOS technology. The amplifier is capable of delivering 16.5dBm of output power at 1.85GHz using a 3.3V supply with an overall measured power added efficiency (PAE) of 30%. The power amplifier employs a class AB output stage, which represents a compromise between efficiency and linearity. Measurement results of the fabricated chip are included.","bibtype":"article","author":"Hella, M.M. and Ismail, M.","journal":"Midwest Symposium on Circuits and Systems","bibtex":"@article{\n title = {A digitally controlled CMOS RF power amplifier},\n type = {article},\n year = {2001},\n identifiers = {[object Object]},\n volume = {2},\n id = {1023ab42-d7b7-3c8f-9fac-cff6e37820ca},\n created = {2017-12-04T05:34:48.054Z},\n file_attached = {false},\n profile_id = {99d7e05e-a704-3549-ada2-dfc74a2d55ec},\n last_modified = {2017-12-04T05:34:48.054Z},\n read = {false},\n starred = {false},\n authored = {true},\n confirmed = {false},\n hidden = {false},\n private_publication = {false},\n abstract = {This paper presents the design, and implementation of an RF power amplifier in a standard 0.35 μm CMOS technology. The amplifier is capable of delivering 16.5dBm of output power at 1.85GHz using a 3.3V supply with an overall measured power added efficiency (PAE) of 30%. The power amplifier employs a class AB output stage, which represents a compromise between efficiency and linearity. Measurement results of the fabricated chip are included.},\n bibtype = {article},\n author = {Hella, M.M. and Ismail, M.},\n journal = {Midwest Symposium on Circuits and Systems}\n}","author_short":["Hella, M.","Ismail, M."],"bibbaseid":"hella-ismail-adigitallycontrolledcmosrfpoweramplifier-2001","role":"author","urls":{},"downloads":0,"html":""},"search_terms":["digitally","controlled","cmos","power","amplifier","hella","ismail"],"keywords":[],"authorIDs":[]}