@article{ ISI:000302960500001,
Author = {Hernandez, T. and Bark, C. W. and Felker, D. A. and Eom, C. B. and
   Rzchowski, M. S.},
Title = {{Localization of two-dimensional electron gas in LaAlO3/SrTiO3
   heterostructures}},
Journal = {{PHYSICAL REVIEW B}},
Year = {{2012}},
Volume = {{85}},
Number = {{16}},
Month = {{APR 18}},
Abstract = {{We report strong localization of two-dimensional electron gas in
   LaAlO3/SrTiO3 epitaxial thin-film heterostructures grown on
   (LaAlO3)(0.3)-(Sr2AlTaO3)(0.7) substrates by using pulsed laser
   deposition with in situ reflection high-energy electron diffraction.
   Using longitudinal and transverse magnetotransport measurements, we have
   determined that disorder at the interface influences the conduction
   behavior, and that increasing the carrier concentration by growing at
   lower oxygen partial pressure changes the conduction from strongly
   localized at low carrier concentration to metallic at higher carrier
   concentration, with indications of weak localization. We interpret this
   behavior in terms of a changing occupation of Ti 3d bands near the
   interface, each with a different spatial extent and susceptibility to
   localization by disorder, and differences in carrier confinement due to
   misfit strain and point defects.}},
DOI = {{10.1103/PhysRevB.85.161407}},
Article-Number = {{161407}},
ISSN = {{1098-0121}},
ResearcherID-Numbers = {{Bark, Chung Wung/B-9534-2014
   Eom, Chang-Beom/I-5567-2014}},
ORCID-Numbers = {{Bark, Chung Wung/0000-0002-9394-4240
   }},
Unique-ID = {{ISI:000302960500001}},
}

{"_id":"deTQJpiTYWhkCQB69","bibbaseid":"hernandez-bark-felker-eom-rzchowski-localizationoftwodimensionalelectrongasinlaalo3srtio3heterostructures-2012","downloads":0,"creationDate":"2018-09-17T23:43:09.378Z","title":"Localization of two-dimensional electron gas in LaAlO3/SrTiO3 heterostructures","author_short":["Hernandez, T.","Bark, C. W.","Felker, D. A.","Eom, C. B.","Rzchowski, M. S."],"year":2012,"bibtype":"article","biburl":"http://oxide.engr.wisc.edu/newWebsite/papers/oxide.bib","bibdata":{"bibtype":"article","type":"article","author":[{"propositions":[],"lastnames":["Hernandez"],"firstnames":["T."],"suffixes":[]},{"propositions":[],"lastnames":["Bark"],"firstnames":["C.","W."],"suffixes":[]},{"propositions":[],"lastnames":["Felker"],"firstnames":["D.","A."],"suffixes":[]},{"propositions":[],"lastnames":["Eom"],"firstnames":["C.","B."],"suffixes":[]},{"propositions":[],"lastnames":["Rzchowski"],"firstnames":["M.","S."],"suffixes":[]}],"title":"Localization of two-dimensional electron gas in LaAlO3/SrTiO3 heterostructures","journal":"PHYSICAL REVIEW B","year":"2012","volume":"85","number":"16","month":"APR 18","abstract":"We report strong localization of two-dimensional electron gas in LaAlO3/SrTiO3 epitaxial thin-film heterostructures grown on (LaAlO3)(0.3)-(Sr2AlTaO3)(0.7) substrates by using pulsed laser deposition with in situ reflection high-energy electron diffraction. Using longitudinal and transverse magnetotransport measurements, we have determined that disorder at the interface influences the conduction behavior, and that increasing the carrier concentration by growing at lower oxygen partial pressure changes the conduction from strongly localized at low carrier concentration to metallic at higher carrier concentration, with indications of weak localization. We interpret this behavior in terms of a changing occupation of Ti 3d bands near the interface, each with a different spatial extent and susceptibility to localization by disorder, and differences in carrier confinement due to misfit strain and point defects.","doi":"10.1103/PhysRevB.85.161407","article-number":"161407","issn":"1098-0121","researcherid-numbers":"Bark, Chung Wung/B-9534-2014 Eom, Chang-Beom/I-5567-2014","orcid-numbers":"Bark, Chung Wung/0000-0002-9394-4240 ","unique-id":"ISI:000302960500001","bibtex":"@article{ ISI:000302960500001,\nAuthor = {Hernandez, T. and Bark, C. W. and Felker, D. A. and Eom, C. B. and\n Rzchowski, M. S.},\nTitle = {{Localization of two-dimensional electron gas in LaAlO3/SrTiO3\n heterostructures}},\nJournal = {{PHYSICAL REVIEW B}},\nYear = {{2012}},\nVolume = {{85}},\nNumber = {{16}},\nMonth = {{APR 18}},\nAbstract = {{We report strong localization of two-dimensional electron gas in\n LaAlO3/SrTiO3 epitaxial thin-film heterostructures grown on\n (LaAlO3)(0.3)-(Sr2AlTaO3)(0.7) substrates by using pulsed laser\n deposition with in situ reflection high-energy electron diffraction.\n Using longitudinal and transverse magnetotransport measurements, we have\n determined that disorder at the interface influences the conduction\n behavior, and that increasing the carrier concentration by growing at\n lower oxygen partial pressure changes the conduction from strongly\n localized at low carrier concentration to metallic at higher carrier\n concentration, with indications of weak localization. We interpret this\n behavior in terms of a changing occupation of Ti 3d bands near the\n interface, each with a different spatial extent and susceptibility to\n localization by disorder, and differences in carrier confinement due to\n misfit strain and point defects.}},\nDOI = {{10.1103/PhysRevB.85.161407}},\nArticle-Number = {{161407}},\nISSN = {{1098-0121}},\nResearcherID-Numbers = {{Bark, Chung Wung/B-9534-2014\n Eom, Chang-Beom/I-5567-2014}},\nORCID-Numbers = {{Bark, Chung Wung/0000-0002-9394-4240\n }},\nUnique-ID = {{ISI:000302960500001}},\n}\n\n","author_short":["Hernandez, T.","Bark, C. W.","Felker, D. A.","Eom, C. B.","Rzchowski, M. S."],"key":"ISI:000302960500001","id":"ISI:000302960500001","bibbaseid":"hernandez-bark-felker-eom-rzchowski-localizationoftwodimensionalelectrongasinlaalo3srtio3heterostructures-2012","role":"author","urls":{},"downloads":0,"html":""},"search_terms":["localization","two","dimensional","electron","gas","laalo3","srtio3","heterostructures","hernandez","bark","felker","eom","rzchowski"],"keywords":[],"authorIDs":["5ba03c0cebfd3910000001e0"],"dataSources":["zArY7xMz8KdDswhhx"]}