@article{hojrup_hansen_bias_2001,
	title = {Bias dependent apparent height of an {Al2O3} thin film on {NiAl}(110), and of supported {Pd} clusters},
	volume = {475},
	url = {http://www.sciencedirect.com/science/article/B6TVX-42HFPPH-D/1/1d54da5e6ddee84c95d15c1f013ca153},
	doi = {10.1016/S0039-6028(00)01077-3},
	abstract = {We have investigated by scanning tunneling microscopy the relationship between applied tunnel bias voltage, Vt, and apparent height of a thin Al2O3 film and of Pd clusters supported by the thin film. The apparent height of the film shows a clear bias dependence only in the Vt interval from +1 to +4 V, where the apparent height increases from zero to 3.5 �. A simple model is presented which qualitatively explains the observed dependence. The apparent height of the Pd clusters increases by 5 � in the bias interval from +2 to +4 V and is independent of Vt outside this range. The observed height change of the clusters cannot be readily explained. We discuss some possible reasons for this.},
	number = {1-3},
	urldate = {2008-06-20},
	journal = {Surface Science},
	author = {Højrup Hansen, K. and Worren, T. and Lægsgaard, E. and Besenbacher, F. and Stensgaard, I.},
	month = mar,
	year = {2001},
	keywords = {Aluminum oxide, Insulating films, Palladium, Scanning tunneling microscopy, TUNNELING},
	pages = {96--102},
}

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