A 0.7V resistive sensor with temperature/voltage detection function in 16nm FinFET technologies. Horng, J. J., Liu, S., Kundu, A., Chang, C., Chen, C., Chiang, H., & Peng, Y. In 2014 Symposium on VLSI Circuits Digest of Technical Papers, pages 1–2, June, 2014. doi abstract bibtex This paper reports a combination structure of temperature and voltage sensor in a 16nm FinFET technology. The circuit transforms PTAT voltage across a resistor into an output clock with PTAT pulse-width. Fabricated in a 16nm CMOS, the temperature sensor achieves 1°C resolution over -10 90°C range and the voltage sensor achieves 4mV output error over 0.38V to 0.56V. The total chip size is 0.01mm2 and draws 70uW total power from a 0.7V supply. Depending on resolution, the measurement time can change from 10μsec to 1.6msec. This approach is not restricted by forward junction bias ( 0.7V) of conventional BJTs and diodes.
@inproceedings{horng_0.7v_2014,
title = {A 0.7V resistive sensor with temperature/voltage detection function in 16nm {FinFET} technologies},
doi = {10.1109/VLSIC.2014.6858376},
abstract = {This paper reports a combination structure of temperature and voltage sensor in a 16nm FinFET technology. The circuit transforms PTAT voltage across a resistor into an output clock with PTAT pulse-width. Fabricated in a 16nm CMOS, the temperature sensor achieves 1°C resolution over -10 90°C range and the voltage sensor achieves 4mV output error over 0.38V to 0.56V. The total chip size is 0.01mm2 and draws 70uW total power from a 0.7V supply. Depending on resolution, the measurement time can change from 10μsec to 1.6msec. This approach is not restricted by forward junction bias ( 0.7V) of conventional BJTs and diodes.},
booktitle = {2014 {Symposium} on {VLSI} {Circuits} {Digest} of {Technical} {Papers}},
author = {Horng, J. J. and Liu, Szu-Lin and Kundu, A. and Chang, Chin-Ho and Chen, Chung-Hui and Chiang, H. and Peng, Yung-Chow},
month = jun,
year = {2014},
pages = {1--2}
}
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{"_id":"BR8szK3bsRW4GiuD7","bibbaseid":"horng-liu-kundu-chang-chen-chiang-peng-a07vresistivesensorwithtemperaturevoltagedetectionfunctionin16nmfinfettechnologies-2014","authorIDs":[],"author_short":["Horng, J. J.","Liu, S.","Kundu, A.","Chang, C.","Chen, C.","Chiang, H.","Peng, Y."],"bibdata":{"bibtype":"inproceedings","type":"inproceedings","title":"A 0.7V resistive sensor with temperature/voltage detection function in 16nm FinFET technologies","doi":"10.1109/VLSIC.2014.6858376","abstract":"This paper reports a combination structure of temperature and voltage sensor in a 16nm FinFET technology. The circuit transforms PTAT voltage across a resistor into an output clock with PTAT pulse-width. Fabricated in a 16nm CMOS, the temperature sensor achieves 1°C resolution over -10 90°C range and the voltage sensor achieves 4mV output error over 0.38V to 0.56V. The total chip size is 0.01mm2 and draws 70uW total power from a 0.7V supply. Depending on resolution, the measurement time can change from 10μsec to 1.6msec. This approach is not restricted by forward junction bias ( 0.7V) of conventional BJTs and diodes.","booktitle":"2014 Symposium on VLSI Circuits Digest of Technical Papers","author":[{"propositions":[],"lastnames":["Horng"],"firstnames":["J.","J."],"suffixes":[]},{"propositions":[],"lastnames":["Liu"],"firstnames":["Szu-Lin"],"suffixes":[]},{"propositions":[],"lastnames":["Kundu"],"firstnames":["A."],"suffixes":[]},{"propositions":[],"lastnames":["Chang"],"firstnames":["Chin-Ho"],"suffixes":[]},{"propositions":[],"lastnames":["Chen"],"firstnames":["Chung-Hui"],"suffixes":[]},{"propositions":[],"lastnames":["Chiang"],"firstnames":["H."],"suffixes":[]},{"propositions":[],"lastnames":["Peng"],"firstnames":["Yung-Chow"],"suffixes":[]}],"month":"June","year":"2014","pages":"1–2","bibtex":"@inproceedings{horng_0.7v_2014,\n\ttitle = {A 0.7V resistive sensor with temperature/voltage detection function in 16nm {FinFET} technologies},\n\tdoi = {10.1109/VLSIC.2014.6858376},\n\tabstract = {This paper reports a combination structure of temperature and voltage sensor in a 16nm FinFET technology. The circuit transforms PTAT voltage across a resistor into an output clock with PTAT pulse-width. Fabricated in a 16nm CMOS, the temperature sensor achieves 1°C resolution over -10 90°C range and the voltage sensor achieves 4mV output error over 0.38V to 0.56V. The total chip size is 0.01mm2 and draws 70uW total power from a 0.7V supply. Depending on resolution, the measurement time can change from 10μsec to 1.6msec. This approach is not restricted by forward junction bias ( 0.7V) of conventional BJTs and diodes.},\n\tbooktitle = {2014 {Symposium} on {VLSI} {Circuits} {Digest} of {Technical} {Papers}},\n\tauthor = {Horng, J. J. and Liu, Szu-Lin and Kundu, A. and Chang, Chin-Ho and Chen, Chung-Hui and Chiang, H. and Peng, Yung-Chow},\n\tmonth = jun,\n\tyear = {2014},\n\tpages = {1--2}\n}\n\n","author_short":["Horng, J. J.","Liu, S.","Kundu, A.","Chang, C.","Chen, C.","Chiang, H.","Peng, Y."],"key":"horng_0.7v_2014","id":"horng_0.7v_2014","bibbaseid":"horng-liu-kundu-chang-chen-chiang-peng-a07vresistivesensorwithtemperaturevoltagedetectionfunctionin16nmfinfettechnologies-2014","role":"author","urls":{},"downloads":0},"bibtype":"inproceedings","biburl":"https://bibbase.org/zotero/ky25","creationDate":"2019-05-11T17:47:04.621Z","downloads":0,"keywords":[],"search_terms":["resistive","sensor","temperature","voltage","detection","function","16nm","finfet","technologies","horng","liu","kundu","chang","chen","chiang","peng"],"title":"A 0.7V resistive sensor with temperature/voltage detection function in 16nm FinFET technologies","year":2014,"dataSources":["XxiQtwZYfozhQmvGR"]}