{"_id":"XXoWn7z9mZcfByRtA","bibbaseid":"houstondycus-white-pierce-venkatasubramanian-lebeau-atomicscalestructureandchemistryofbi2te3gaasinterfacesgrownbymetallorganicvanderwaalsepitaxy-2013","author_short":["Houston Dycus, J","White, R. M","Pierce, J. M","Venkatasubramanian, R.","LeBeau, J. M"],"bibdata":{"bibtype":"article","type":"article","title":"Atomic scale structure and chemistry of Bi2Te3/GaAs interfaces grown by metallorganic van der Waals epitaxy","author":[{"propositions":[],"lastnames":["Houston","Dycus"],"firstnames":["J"],"suffixes":[]},{"propositions":[],"lastnames":["White"],"firstnames":["Ryan","M"],"suffixes":[]},{"propositions":[],"lastnames":["Pierce"],"firstnames":["Jonathan","M"],"suffixes":[]},{"propositions":[],"lastnames":["Venkatasubramanian"],"firstnames":["Rama"],"suffixes":[]},{"propositions":[],"lastnames":["LeBeau"],"firstnames":["James","M"],"suffixes":[]}],"journal":"Appl. Phys. Lett.","publisher":"American Institute of Physics","volume":"102","pages":"081601","month":"25 February","year":"2013","keywords":"6835Ct; 6847Fg; 6855ag; 7155Eq; 8115Gh; 8115Kk; III-V semiconductors; MOCVD; bismuth compounds; dangling bonds; gallium arsenide; interface structure; scanning-transmission electron microscopy; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; vapour phase epitaxial growth;LeBeau Group;HfO2","doi":"10.1063/1.4793518","bibtex":"@ARTICLE{Houston-Dycus2013-bn,\n title = \"{Atomic scale structure and chemistry of Bi2Te3/GaAs interfaces\n grown by metallorganic van der Waals epitaxy}\",\n author = \"Houston Dycus, J and White, Ryan M and Pierce, Jonathan M and\n Venkatasubramanian, Rama and LeBeau, James M\",\n journal = \"Appl. Phys. Lett.\",\n publisher = \"American Institute of Physics\",\n volume = 102,\n pages = 081601,\n month = \"25~\" # feb,\n year = 2013,\n keywords = \"6835Ct; 6847Fg; 6855ag; 7155Eq; 8115Gh; 8115Kk; III-V\n semiconductors; MOCVD; bismuth compounds; dangling bonds; gallium\n arsenide; interface structure; scanning-transmission electron\n microscopy; semiconductor epitaxial layers; semiconductor growth;\n semiconductor materials; vapour phase epitaxial growth;LeBeau\n Group;HfO2\",\n doi = \"10.1063/1.4793518\"\n}\n\n","author_short":["Houston Dycus, J","White, R. M","Pierce, J. M","Venkatasubramanian, R.","LeBeau, J. M"],"key":"Houston-Dycus2013-bn","id":"Houston-Dycus2013-bn","bibbaseid":"houstondycus-white-pierce-venkatasubramanian-lebeau-atomicscalestructureandchemistryofbi2te3gaasinterfacesgrownbymetallorganicvanderwaalsepitaxy-2013","role":"author","urls":{},"keyword":["6835Ct; 6847Fg; 6855ag; 7155Eq; 8115Gh; 8115Kk; III-V semiconductors; MOCVD; bismuth compounds; dangling bonds; gallium arsenide; interface structure; scanning-transmission electron microscopy; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; vapour phase epitaxial growth;LeBeau Group;HfO2"],"metadata":{"authorlinks":{}},"downloads":1},"bibtype":"article","biburl":"https://paperpile.com/eb/hvQdZzcQAp","dataSources":["XvQYbdoqrgtkncm5N","T6bwdcdAx2jmtGv5a"],"keywords":["6835ct; 6847fg; 6855ag; 7155eq; 8115gh; 8115kk; iii-v semiconductors; mocvd; bismuth compounds; dangling bonds; gallium arsenide; interface structure; scanning-transmission electron microscopy; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; vapour phase epitaxial growth;lebeau group;hfo2"],"search_terms":["atomic","scale","structure","chemistry","bi2te3","gaas","interfaces","grown","metallorganic","van","der","waals","epitaxy","houston dycus","white","pierce","venkatasubramanian","lebeau"],"title":"Atomic scale structure and chemistry of Bi2Te3/GaAs interfaces grown by metallorganic van der Waals epitaxy","year":2013,"downloads":1}