Tin Disulfide-An Emerging Layered Metal Dichalcogenide Semiconductor: Materials Properties and Device Characteristics. Huang, Y., Sutter, E., Sadowski, J. T., Cotlet, M., Monti, O. L. A., Racke, D. A., Neupane, M. R., Wickramaratne, D., Lake, R. K., Parkinson, B. A., & Sutter, P. ACS NANO, 8(10):10743–10755, October, 2014.
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@article{huang_tin_2014,
	title = {Tin {Disulfide}-{An} {Emerging} {Layered} {Metal} {Dichalcogenide} {Semiconductor}: {Materials} {Properties} and {Device} {Characteristics}},
	volume = {8},
	issn = {1936-0851},
	doi = {10.1021/nn504481r},
	number = {10},
	journal = {ACS NANO},
	author = {Huang, Yuan and Sutter, Eli and Sadowski, Jerzy T. and Cotlet, Mircea and Monti, Oliver L. A. and Racke, David A. and Neupane, Mahesh R. and Wickramaratne, Darshana and Lake, Roger K. and Parkinson, Bruce A. and Sutter, Peter},
	month = oct,
	year = {2014},
	pages = {10743--10755},
}

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