Tin Disulfide—An Emerging Layered Metal Dichalcogenide Semiconductor: Materials Properties and Device Characteristics. Huang, Y., Sutter, E., Sadowski, J. T., Cotlet, M., Monti, O. L., Racke, D. A., Neupane, M. R., Wickramaratne, D., Lake, R. K., Parkinson, B. A., & Sutter, P. ACS Nano, 8(10):10743–10755, October, 2014. Number: 10
Tin Disulfide—An Emerging Layered Metal Dichalcogenide Semiconductor: Materials Properties and Device Characteristics [link]Paper  doi  abstract   bibtex   
Layered metal dichalcogenides have attracted significant interest as a family of single- and few-layer materials that show new physics and are of interest for device applications. Here, we report a comprehensive characterization of the properties of tin disulfide (SnS2), an emerging semiconducting metal dichalcogenide, down to the monolayer limit. Using flakes exfoliated from layered bulk crystals, we establish the characteristics of single- and few-layer SnS2 in optical and atomic force microscopy, Raman spectroscopy and transmission electron microscopy. Band structure measurements in conjunction with ab initio calculations and photoluminescence spectroscopy show that SnS2 is an indirect bandgap semiconductor over the entire thickness range from bulk to single-layer. Field effect transport in SnS2 supported by SiO2/Si suggests predominant scattering by centers at the support interface. Ultrathin transistors show on?off current ratios \textgreater106, as well as carrier mobilities up to 230 cm2/(V s), minimal hysteresis, and near-ideal subthreshold swing for devices screened by a high-k (deionized water) top gate. SnS2 transistors are efficient photodetectors but, similar to other metal dichalcogenides, show a relatively slow response to pulsed irradiation, likely due to adsorbate-induced long-lived extrinsic trap states.
@article{huang_tin_2014,
	title = {Tin {Disulfide}—{An} {Emerging} {Layered} {Metal} {Dichalcogenide} {Semiconductor}: {Materials} {Properties} and {Device} {Characteristics}},
	volume = {8},
	issn = {1936-0851},
	shorttitle = {Tin {Disulfide}—{An} {Emerging} {Layered} {Metal} {Dichalcogenide} {Semiconductor}},
	url = {http://dx.doi.org/10.1021/nn504481r},
	doi = {10.1021/nn504481r},
	abstract = {Layered metal dichalcogenides have attracted significant interest as a family of single- and few-layer materials that show new physics and are of interest for device applications. Here, we report a comprehensive characterization of the properties of tin disulfide (SnS2), an emerging semiconducting metal dichalcogenide, down to the monolayer limit. Using flakes exfoliated from layered bulk crystals, we establish the characteristics of single- and few-layer SnS2 in optical and atomic force microscopy, Raman spectroscopy and transmission electron microscopy. Band structure measurements in conjunction with ab initio calculations and photoluminescence spectroscopy show that SnS2 is an indirect bandgap semiconductor over the entire thickness range from bulk to single-layer. Field effect transport in SnS2 supported by SiO2/Si suggests predominant scattering by centers at the support interface. Ultrathin transistors show on?off current ratios {\textgreater}106, as well as carrier mobilities up to 230 cm2/(V s), minimal hysteresis, and near-ideal subthreshold swing for devices screened by a high-k (deionized water) top gate. SnS2 transistors are efficient photodetectors but, similar to other metal dichalcogenides, show a relatively slow response to pulsed irradiation, likely due to adsorbate-induced long-lived extrinsic trap states.},
	number = {10},
	urldate = {2015-05-26},
	journal = {ACS Nano},
	author = {Huang, Yuan and Sutter, Eli and Sadowski, Jerzy T. and Cotlet, Mircea and Monti, Oliver L.A. and Racke, David A. and Neupane, Mahesh R. and Wickramaratne, Darshana and Lake, Roger K. and Parkinson, Bruce A. and Sutter, Peter},
	month = oct,
	year = {2014},
	note = {Number: 10},
	pages = {10743--10755},
}

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